System and method for cryogenic hybrid technology computing and memory

ABSTRACT

A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a Continuation of U.S. patent applicationSer. No. 14/643,078, filed Mar. 10, 2015, now U.S. Pat. No. 9,520,180,issued Dec. 13, 2016, which claims benefit of priority from U.S.Provisional Patent Application 61/951,169, filed Mar. 11, 2014, theentirety of which are expressly incorporated herein by reference.

BACKGROUND OF THE INVENTION

The explosive growth of the Internet has transformed data centers intolarge industrial-scale computer facilities with extraordinarily highenergy demands. From Google and Facebook to banking, cloud computing andsupercomputing, an average data center already uses as much electricityas a medium-size town. In Silicon Valley, data centers are also listedas the top air polluters from backup diesel exhausts. Already by 2012,the energy costs for a data center were estimated to exceed the cost ofthe original capital investment over its useful life. The carbonfootprint of data centers is expected to exceed that of the airlineindustry by 2020. For 2011, the Facebook carbon footprint was ˜285,000metric tons of CO₂ equivalent. For 2010, that of Google was five timeshigher—1,500,000 tons. Energy considerations are forcing theconstruction of new data centers in areas where the climate helpscooling and electricity is cheaper. A recent Facebook 120 MW data centerwas built just south of the Arctic Circle in Sweden, close to ahydropower station producing twice as much electricity as the Hoover Damin Nevada. Besides just high energy costs and adverse environmentalimpact, there is a compelling technical reason to improve the energyefficiency of computing technologies. The development of the nextgenerations of high-end computers (e.g., exascale supercomputers andbeyond, where exa=10¹⁸) will not be possible unless a significantimprovement in energy efficiency is achieved over the technologyavailable today. See, for example, R. Service, “What'll It Take to GoExascale”, Science Magazine, vol. 335, p. 394, Jan. 27, 2012, expresslyincorporated herein by reference. For a computer rated at 1 ExaFLOPS(10⁹ Giga FLoating-point OPerations per Second), this requires >50GigaFLOPS/W. As of November 2012, the fastest supercomputer Titan (CrayXK7) had ˜2 GigaFLOPS/W (˜20 PetaFLOPS at ˜10 MW). The power dissipationtarget for a future exascale supercomputer is very stringent—no morethan 20 MW, which is just two times larger than that of Titan with ˜1/50 ExaFLOPS.

The heart of the problem is in the relatively low energy efficiency ofcurrent computer circuit technologies that consume too much power forcomputing, storing and moving data between processors and memories.Despite the fact that Moore's law continues to enable even moretransistors per chip, Dennard scaling (the simultaneous reduction ofCMOS threshold and bias voltages commensurate with device sizereduction) ended a few years ago. Now every new CMOS process generationhas higher power density, and peak power requirements are increasing ata rate far exceeding the ability to remove heat. This is the reason thatenergy efficiency rather than switching speed or circuit area has nowbecome the dominant metric in computing performance, from hand-heldportable devices to high-end, large-scale supercomputers.

Conventional approaches are unlikely to yield sufficient reduction inpower density. In contrast, superconducting single-flux quantum (SFQ)circuits, by virtue of their inherent low power dissipation, high speed,and lossless interconnect, present an excellent opportunity todramatically increase the energy efficiency of high-end computingapplications. See, for example, D. S. Holmes, et al., “Energy-EfficientSuperconducting Computing—Power Budgets and Requirements”, IEEETransactions on Applied Superconductivity, vol. 23, no. 3, 1701610 (June2013), expressly incorporated herein by reference. This shoulddramatically enhance the energy-efficiency of data centers and enablenew generations of supercomputers.

Ever since the late 1960s, superconducting Josephson junction integratedcircuits have been considered as possible candidates for high-speed,low-power computing. See, for example, W. Anacker, “Josephson ComputerTechnology: An IBM Research Project”, IBM Journal of Research andDevelopment, vol. 24, no. 2, p. 107 (March 1980), expressly incorporatedherein by reference. See also U.S. Pat. Nos. 5,365,476; 4,509,146;4,360,898; 4,633,439; 5,126,598; 5,388,068; all expressly incorporatedherein by reference. This technology produced circuits with very lowpower densities and clock rates of several GHz, fabricated using arobust integrated circuit process based on niobium Josephson junctions,typically operating at a temperature near 4 K. For more on the niobiumIC process, see e.g., U.S. Pat. Nos. 4,430,662; 7,615,385; 8,383,426;4,499,199; 4,589,161; 7,060,508; 7,105,853; 8,301,214; 8,437,818;2011/0089405; 5,055,158; all expressly incorporated herein by reference.However, these earlier circuits were superseded by another much fasterlogic family also based on Josephson junctions, superconducting rapidsingle-flux quantum (RSFQ) logic, invented in the mid-1980s, whichpromised digital circuits with clock rates up to 100 GHz. See K. K.Likharev and V. K. Semenov, “RSFQ Logic/Memory Family: A New JosephsonJunction Technology for Sub-Terahertz-Clock Frequency Digital Systems”,IEEE Transactions on Applied Superconductivity, vol. 1, no. 1, p. 3(March 1991), expressly incorporated herein by reference. This enabledthe development of ultrafast digital signal processing circuits by themid-2000s, and today, cryogenic RSFQ Digital-RF receivers operating with30 GHz clock frequency are available for wide-bandwidth satellitecommunications and signal intelligence applications. See, for example,O. Mukhanov, et al., “Superconductor Digital-RF Receiver Systems”, IEICETransactions on Electronics, vol. E91-C, p. 306 (2008), expresslyincorporated herein by reference. See also U.S. Pat. Nos. 8,462,889;8,260,143; 8,260,144; 8,260,145; 8,521,117; 8,055,235; 8,521,117;8,301,104; 8,514,986; 7,876,869; 8,045,660; 8,130,880; 8,514,986;7,280,623; 8,249,540; 8,401,509; 7,701,286; 7,362,125; 7,991,013;8,498,491; all expressly incorporated herein by reference. Furthermore,various prototypes of high-speed processors, data and signal processingmodules have also been demonstrated. See, for example, A. Fujimaki etal., “Bit-serial single flux quantum microprocessor CORE, IEICETransactions on Electronics, vol. E91-C, p. 342 (2008); M. Dorojevets,et al., Data-flow microarchitecture for wide datapath RSFQ processors”,IEEE Transactions on Applied Superconductivity, vol. 21, no. 3, p. 787(June 2011); M. Dorojevets, et al., “8-Bit Asynchronous Sparse-TreeSuperconductor RSFQ Arithmetic-Logic Unit With a Rich Set ofOperations”, IEEE Trans. Appl. Supercond., vol. 23, no. 3, 1700104 (June2013); all expressly incorporated herein by reference. See also U.S.Pat. Nos. 7,376,691; 7,440,490; 6,917,537; 6,865,639; 7,443,719;7,903,456; 6,960,929; 7,459,927; also WO2002/069498; all expresslyincorporated herein by reference.

RSFQ logic is based on exploiting single quanta of magnetic flux toencode clock and data, corresponding to a fast voltage pulse isgenerated with quantized area∫V(t)dt=Φ ₀ =h/2e=2.06×10⁻¹⁵ Wb=2.06 mV-ps,

known as a single flux quantum or SFQ. For a typical Josephson junction,such a pulse is created with pulse height ˜1 mV and pulsewidth ˜2 ps.The energy consumed during this switching event is of the order ofI_(C)×Φ₀˜10⁻¹⁹ J assuming I_(C)˜0.1 mA (chosen to exceed thermal noiseat 4 K). Therefore, the gate switching energy is directly related tothermal energy rather than device dimensions as in CMOS. The picosecondquantized SFQ voltage pulses were proven to propagate ballisticallyon-chip and between chips via superconducting microstrip lines (with lowloss and dispersion) without the need for amplification, and with speedsclose to the speed of light. This is the key advantage ofsuperconducting technology over CMOS, in which the data movement energyis proportional to the length of interconnect and currently representsthe dominant share of the consumed energy.

Until recently, the inherently low switching power of conventional RSFQlogic was overwhelmed by the static power dissipation in the network ofbias resistors used to distribute the required amounts of DC biascurrent for RSFQ gates. This overhead power was dissipated all the timeregardless of circuit operation status. Recent efforts have resulted insignificant reduction and even complete elimination of the static powerdissipation in SFQ circuits. See, e.g., O. Mukhanov, “Energy-efficientsingle flux quantum technology”, IEEE Trans. Appl. Supercond., vol. 21,p. 760 (2011); Q. Herr, et al., “Ultra-low-power superconductor logic”,Journal of Applied Physics, vol. 109, 103903 (2011); M. Tanaka, et al.,“Low-energy-consumption RSFQ circuits driven by low voltages”, IEEETrans. Appl. Supercond., vol. 23, 1701104 (June 2013), all expresslyincorporated herein by reference. See also U.S. Pat. Nos. 8,571,614;7,724,020; 7,977,064; 8,610,453; 8,489,163; all expressly incorporatedherein by reference. In particular, the new energy-efficient RSFQ logicfamilies (eSFQ and ERSFQ) have zero static power dissipation whileretaining all the advantages of conventional RSFQ logic. In thesecircuits, resistors are replaced with superconducting Josephsonjunctions performing the role of current limiters. To date, a number ofsuccessful eSFQ and ERSFQ integrated circuits have been demonstrated.See, for example, the following articles, all expressly incorporatedherein by reference: D. Kirichenko, et al., “Zero static powerdissipation biasing of RSFQ circuits”, IEEE Trans. Appl. Supercond.,vol. 21, p. 776 (June 2011); M. Volkmann, et al., “Implementation ofenergy efficient single flux quantum digital circuits with sub-aJ/bitoperation”, Supercond. Science & Technology, vol. 26, 015002 (2013); M.Volkmann, et al., “Experimental investigation of energy-efficientdigital circuits based on eSFQ logic”, IEEE Trans. Appl. Supercond.,vol. 23, 1301505 (June 2013); M. Volkmann, et al., “Operation ofpractical eSFQ circuits,” Proc. IEEE 14^(th) Int. Supercond. ElectronicsConf. (2013).

For many years the prospects of superconducting technology for high-endcomputing have been stymied by the relatively low capacity ofsuperconducting memories. Very recently, new memory approaches based onmagnetic Josephson junctions (MJJs) and on cryogenic magnetic elementshave been proposed and are now being extensively studied. See US Patents2012/0184445; 2012/0302446; 8,270,209; 8,547,732; 2012/0314490; see alsoWO2013/025994; WO2013/180946; all expressly incorporated herein byreference. In MJJs, critical current can switch between two distinctstates corresponding to logical ‘0’ and ‘1’ depending on themagnetization of the ferromagnetic layer(s). Memory circuits using MJJscan be made that are electrically and physically compatible with SFQcircuits. This allows a co-fabrication of memory and digital circuits onthe same chip, leading to significant processor-memory architectureadvantages relevant to high-end computing. See, e.g., the followingpapers, expressly incorporated herein by reference: I. Vernik, et al.,“Magnetic Josephson junctions with superconducting interlayer forcryogenic memory”, IEEE Trans. Appl. Supercond., vol. 23, 1701208(2013); T. Larkin, et al., “Ferromagnetic Josephson switching devicewith high characteristic voltage”, Appl. Physics Letters, vol. 100,222601 (May 2012); S. Bakurskiy, et al., “Theoretical model ofsuperconducting SIsFS devices”, Appl. Physics Letters, vol. 102, 192603(May 2013); V. Ryazanov, et al., “Magnetic Josephson junction technologyfor digital and memory applications”, Physics Procedia, vol. 36, p. 35(2012); G. Prokopenko, et al., “DC and RF measurements ofsuperconducting-ferromagnetic multiterminal devices”, Proc. IEEE 14^(th)Int. Superconductive Electronics Conf. (2013).

Cooling infrastructure for modern data centers accounts on average for25-50% of total power. For superconductor systems, the energy efficiencyof the entire cryosystem is paramount. The efficiency of available 4 Kcryocoolers can reach <400 W/W for higher-capacity units (600-900 W)relevant for high-end computing systems, such as a Linde LR280cryocooler with 360 W/W efficiency. A future cryogenic supercomputerwill have a much smaller footprint than present systems, as the maincomputing part will occupy a single cryocooler (or perhaps two forredundancy). Besides the cryocooler, the cryosystem energy efficiencydepends on minimizing energy losses and heat leaks in the input/outputdata links and power delivery network. Practical experience with smallersuperconductor electronics systems helped the development of ahybrid-temperature hybrid-technology system integration approach tomaximize the cryosystem

energy efficiency. The first generation of high-temperaturesuperconductor (HTS) cables for DC bias current delivery weresuccessfully demonstrated to reduce heat leaks in RSFQ electroniccryosystems. See, for example, the following articles, expresslyincorporated herein by reference: A. Kadin, et al., “Current leads andoptimized thermal packaging for superconducting systems on multistagecryocoolers”, IEEE Trans. Appl. Supercond., vol. 17, p. 975 (2007); R.Webber, et al., “Ultra-low-heat-leak YBCO superconducting leads forcryoelectronic applications”, IEEE Trans. Appl. Supercond., vol. 19, p.999 (2009); A. Pan, et al., “Development of energy-efficient cryogenicleads with high-temperature superconducting films on ceramicsubstrates”, Physics Procedia, vol. 36 (2012).

Serious development effort is required in order to take advantage of allof the recent advances capable of addressing the runaway power ofhigh-end computing, and getting superconducting technologies into datacenters and supercomputers. A central problem is the relatively lowcomplexity and device density of present superconductor integratedcircuits, especially compared to current CMOS technology. The availableNb fabrication processes are generally limited to ˜1 μm linewidth withjust a few Nb layers. It is a priority to develop a high-yield, highintegration density, planarized fabrication process with linewidth˜90-250 nm, critical current density J_(C)>10 kA/cm², and >8-10 Nbwiring layers. Advancing the critical current density to 100 kA/cm², orusing a different junction barrier material than the standard aluminumoxide, is necessary to achieve self-shunted Josephson junctions toeliminate the area-consuming shunting resistors. Another new directionfor process development is superconducting-ferromagnetic Josephsonjunctions (Magnetic Josephson Junctions or MJJs) for magnetic memory andprogrammable logic. This will enable new programmable functionalitiesunavailable to superconducting electronics in the past. For example,three-dimensional (3D) integration of processing and memory circuits,fabricated in a single process, should lead to a dramatic gain in themicroprocessor performance efficiency, enabling new microarchitectureshighly relevant for high-end data-centric computing. All these can beachieved while developing a better understanding of superconductormaterial issues and actively employing already-developed semiconductortechniques and equipment.

The recent innovations in energy-efficient SFQ digital circuits,eliminating static power dissipation of conventional RSFQ logic, arehighly promising. Further reduction of dynamic power dissipation canenlarge the advantage of SFQ circuits over the competition. The nextlogical step is to implement more functionally significant circuits,such as a microprocessor. One of the common traps with any newtechnology is the attempt to make better versions of existing solutionswhich were optimized for older existing technology. The RSFQ-typecircuits (eSFQ and ERSFQ) are based on sequential logic, which isdifferent from CMOS combinational logic, implying that theimplementation of CMOS-inspired processor microarchitectures andalgorithms may not be optimal and will lead to an underutilization oftechnology potential.

The extremely high clock rate (˜100 GHz) achievable in RSFQ-typecircuits fits better to microarchitectures with a high degree ofvectorization. In order to keep the processing pipeline full, one shouldhave a fast memory capable of supplying input data and store the resultsat the same high data rate. This can be alleviated by clever ways ofusing the internal gate memory. MJJ-based memory circuits integrated inthe immediate proximity of processing modules (e.g., as 3D structures)can be an excellent solution. Recent results in MJJ device developmentprovides a path to development of functional fast and energy-efficientmemories, including nonvolatile random access memory (RAM) compatiblewith energy-efficient (e.g., eSFQ) digital circuits. The impact ofintegrated MJJ RAM and JJ eSFQ processing blocks is difficult tooverestimate. This can also lead to the development of programmabledigital logic arrays functionally similar to semiconductorfield-programmable gate arrays (FPGAs). In addition, the integrated SFQcircuits and non-superconducting magnetic RAM devices are attractive forhigher-capacity memories, e.g., main memories.

An energy-efficient, high-bandwidth data interface to room temperaturemodules and the optical domain is unavoidable in any high-end computingsystem. There is a need to develop a technology to convert a low-voltage(˜0.3-1.0 mV) electrical digital signal to the optical domain at a highdata rate (tens of GHz). This has been a longstanding and extremelydifficult problem, which has retarded the integration of ultra-low-powerelectronics with conventional electronics and fiber-optics. To meettightly-constrained power budgets, the energy efficiency of data linksin exascale systems should be on the order of 2 pJ/bit or less. Thedegree of amplification at a specific temperature stage can be theguiding principle in the energy-efficiency optimization of data linksacross different temperature stages available in a cryosystem. HTSmulti-bit data cables capable of transmitting low-power signals from 4 Kto higher-temperature amplifiers and electro-optical devices (e.g.,vertical-cavity surface-emitting lasers, VCSELs) with negligible lossesand dispersion will be required. See, for example, O. Mukhanov, et al.,“Development of energy-efficient cryogenic-optical data link”, Proc.IEEE 14^(th) Int. Superconductive Electronic Conference (2013),expressly incorporated herein by reference.

It is important to distinguish computers based on RSFQ logic from a setof completely different approaches that are also based on cryogenicJosephson junctions, under the heading “quantum computers”. RSFQ-basedcomputers are digital computers based on classical bits that assumealternate, and not superposed values. In contrast, quantum computers arebased on quantum superposition of bits in two or more quantum states,known as qubits. Both analog and digital processors based onsuperconducting qubits have been proposed, and in some cases developed.These superconducting quantum computers typically require cooling toextremely low temperatures, less than 0.1 K, much colder than the 4 Ktypical for classical superconducting niobium RSFQ computers. See, forexample, the following US patents, expressly incorporated herein byreference: U.S. Pat. Nos. 7,135,701; 7,418,283; 8,284,585; 8,437,168;8,247,799; 7,605,600; 8,234,103; 7,335,909; 7,889,992; 6,803,599;6,936,841; 6,838,694; 7,307,275; 6,495,854; 6,649,929; 6,563,310;6,563,311; 6,459,097; 7,847,615; 7,533,068; 8,283,943; 6,979,835;6,627,915; 7,253,654. The design and performance of thesesuperconducting quantum computer systems is completely different fromthe high-performance superconducting classical computers describedherein.

The prior art has not yet effectively solved the problems associatedwith integrating ultrafast superconducting processors with hybridsuperconducting/magnetic memories, cryogenic cooling systems, high-speedinput/output devices, and room-temperature processors and networks.

With rising energy costs and technical roadblocks, computing systemenergy efficiency has become the dominating metric dictating the courseof future technology development. Superconducting single-flux quantumprocessors augmented with superconducting-ferromagnetic memorytechnology can finally break into prominence by addressing the energyefficiency of high-end computing systems. The key innovations justwithin the last few years have dramatically increased the potential ofsuperconducting electronics, addressing all known critical problemswhich restricted the use of superconductivity in high-end computing inthe past. The present disclosure details several technical advancesbeyond the prior art, which permit development a cryogenicsuperconducting computing demonstrator system and ultimatelyenergy-efficient data centers and a new generation of supercomputers.

SUMMARY OF THE INVENTION

I. Superconducting Energy-Efficient Wave-Pipelined Digital Processor

One embodiment of the technology comprises an energy-efficientsuperconducting microprocessor architecture, comprising integratedcomponents as shown in a block diagram in FIG. 1. These include thearithmetic logic unit (ALU) and on-chip memory (register file). Bothdevices are bit-scalable and designed for an N-bit word; advanced modernmicroprocessors are typically configured for 64 bits. Each of these bitsmay be processed in parallel through both the ALU and the register file,but there are also carry-bit signals that propagate from lesssignificant bits to more significant bits. The most conservativeapproach would be to process each of the N bits at the clock rate for agiven operation before transferring the N-bit word to the next stage.However, this would require a long N-bit delay for the carry bit topropagate from the Least Significant Bit (LSB) to the Most SignificantBit (MSB). Even for the ultrafast clock rates f_(c1) of RSFQ circuitsthat approach or exceed 100 GHz, a fully synchronous delay period ofN/f_(c1) would slow down the processor to an unacceptable degree.

In a preferred embodiment with a wave pipelined approach, the carrysignal is asynchronous and propagates at maximum speed across the N bitsof the ALU. According to this approach, a pipeline stage is allowed tostart its operation on two independent data operands as soon as bothoperands arrive. There is no clock pulse used to advance the computationfrom one stage to another. Instead, a clock pulse that follows the datais used to reset the cells in a given stage to make them ready toprocess the next data wave. This type of synchronization is distinctfrom an earlier RSFQ-based pipelined ripple-carry adder, where a co-flowtiming technique was used to clock data throughout the entire adderrequiring a clock distribution tree for every stage. The present wavepipelined ALU architecture (FIG. 1) exploits the advantages of localtiming in an ERSFQ ALU, by propagating an instruction code and a clocksignal together from LSB to MSB of the operands. These “skewed words”(corresponding to the tilted lines in FIG. 1) propagate through the ALU,and continue on to the memory register below, providing extremely highdata throughput. A prototype 8-bit ERSFQ ALU was designed and simulated,and for a 44 GHz clock rate, provided a throughput of 350 Gbit-ops/s.Taking the switching energy to be I_(C)Φ₀, and estimating I_(C)=40 μA,gives the energy performance as 2.5×10¹⁷ bit-ops/J, a remarkablyefficient number. One can also take the reciprocal of this to obtain theenergy/bit-op, which is 4×10⁻¹⁸ J, much smaller than that for classicalRSFQ circuits, and orders of magnitude smaller than that for the mostadvanced semiconductor processors. By virtue of the modulararchitecture, this estimate should be independent of the size of theword, and should continue to apply for an advanced 64-bit processor.

In another aspect of a preferred embodiment of the energy-efficientprocessor, the register file is also scaled up not only in word size(number of bits per register), but also in the number of registers itcontains. For example, a reasonable number of registers for an advanced64-bit processor may be 128. This would correspond to a register filethat can store and manipulate 64×128=8192 bits (1 Kbyte). As is known inthe prior art, energy-efficient RSFQ circuits are naturally biased inparallel with a very small average voltage V=Φ₀f_(c1), where Φ₀=h/2e=2μV/GHz and the clock frequency may be as high as f_(d)=100 GHz. Such asmall voltage ˜200 μV is inconveniently small for an energy-efficientpower supply. The bias current per Josephson junction is ˜0.1 mA, whichfor a chip with 100,000 junctions would lead to a total bias current˜100 A, which may be inconveniently large. One way to address thismismatch is the use of serial biasing of repetitive modular circuits,also known in the prior art as “current recycling”. See, for example, S.Kaplan, “Serial biasing of 16 modular circuits at 50 Gb/s”, IEEE Trans.Appl. Supercond., vol. 22, 1300103 (August 2012), expressly incorporatedherein by reference. This approach increases the total voltage anddecreases the current by the number of modular units serially biased. Ina preferred embodiment of the register file, each of the 128 registersmay be designed on a separate section of ground plane, allowing theregisters to be serially biased (see FIG. 2).

The modular nature of this preferred architecture has a number ofadvantages which simplify scaling to larger systems. From a designperspective, the scaling of the processor can proceed from a word sizeas small as 1 bit, and any problems related to system scale such asglobal timing, performance margins, and fabrication yield will manifestthemselves incrementally, so that they can be isolated and solvedefficiently. The register file is similarly modular, making it possibleto integrate the processor with the register file in an efficientmanner, starting at a word size of two bits. This enables the skewedword high-speed wave-pipelined datapath initiated in the ALU to continueunimpeded into the register file (see FIG. 1), which requires couplingacross many DC isolation steps associated with the serial DC biasing.

II. High-Inductance Wiring Layer for Energy-Efficient RSFQ Circuits

Another embodiment of the invention will incorporate superconductinginductive elements formed from a high-inductance wiring layer into thedesign of energy-efficient RSFQ circuits. All superconductive connectingwires exhibit inductance, since the resistance is zero or negligible. InRSFQ circuits of the prior art, the inductance is desired to be small inmany connecting wires, while larger values of inductance are desired insome connections. In energy-efficient RSFQ designs, large inductancesmay be required for current distribution in power bias lines, since themore conventional bias resistors, which produce static powerdissipation, are removed. Furthermore, relatively large inductors areneeded in all RSFQ designs for “quantizing loops” in bistable elementssuch as latches, switches, registers, and memory cells. See FIG. 3 whichshows an example energy-efficient RSFQ circuit with inductors labeledthat might be patterned from a high-inductance wiring layer.Specifically, the loop inductance in such a quantizing loop is typicallygiven by LI_(C)˜Φ₀=h/2e=2 mA-pH. Taking a typical I_(C)˜0.1 mA, oneneeds L˜20 pH. Note that high-permeability magnetic materials may not beused with such superconducting inductors given the need to carry pspulses, so that the conventional magnetic inductance is givenapproximately by L˜μ₀a, where a is a characteristic dimension (such as alength or loop diameter) and μ₀=1.26 μH/m=1.26 pH/um is the permeabilityof free space. Note that L˜20 pH corresponds to a˜20 μm, which is not asmall size for high-density integrated circuits. While there arecertainly known methods to increase inductance (such as multi-turncoils), large magnetic inductors may have other disadvantages for RSFQcircuits, associated with unintended mutual inductive coupling to otherinductors in the circuit and to trapped magnetic flux (vortices) thatmay also be present in nearby locations on the chip.

In a preferred embodiment of the technology, the circuit comprises atleast two distinct wiring layers, one with low inductance and anotherwith high inductance. The high-inductance wiring layer may exhibitsubstantially enhanced values of inductance based on the property knownin the art as kinetic inductance, whereby most of the effectiveinductance is associated not with magnetic fields external to theconductor (corresponding to conventional magnetic inductance), butrather with kinetic energy of the current-carrying electrons inside theconductor. The kinetic inductance does not couple magnetic fields, butis otherwise equivalent to circuit inductance (V=L dI/dt) for most otherpurposes. See, for example, U.S. Pat. No. 4,028,714, expresslyincorporated herein by reference; also seeen.wikipedia.org/wiki/Kinetic_inductance; Chen et al., “KineticInductance Memory Cell”, IEEE Trans. Appl. Supercond., vol. 2, p. 95(1992); Johnson et al., “Anomalous current dependence of kineticinductance of ultrathin NbN meander lines”, IEEE Trans. Appl.Supercond., vol. 7, p, 3492 (1997). Any superconducting inductor willcomprise both magnetic inductance and kinetic inductance; however, mostsuperconducting inductors in the prior art, particularly thoseassociated with RSFQ circuits, were comprised predominantly of magneticinductance. In contrast, the high-inductance wiring layer of a preferredembodiment may exhibit an inductance which is comprised predominantly ofkinetic inductance. Such an inductor is not constrained by theconventional magnetic relation L˜μ₀a, and can have a large inductance ina very small length, enabling increased device density in integratedcircuits. Furthermore, the use of inductors dominated by kineticinductance may reduce the negative effects of parasitic inductivecoupling between signals on different connecting lines and with trappedflux.

In a further preferred embodiment, the high-inductance wiring layerdominated by kinetic inductance may comprise a thin superconductinglayer of a different superconducting material than that of thelow-inductance wiring layer. For example, the low-inductance wiringlayer may be comprised of niobium (Nb), while the high-inductance wiringlayer may be comprised of niobium nitride (NbN). Furthermore, thehigh-inductance wiring layer may comprise a very thin layer of NbN, witha thickness t<<λ, where λ is the magnetic penetration depth of thesuperconductor. In this limit, the kinetic inductance per square of thefilm is given by a surface inductance L_(s)=μ₀λ²/t, where L=L_(s) (l/w)for a line of length l and width w. (See later Detailed Description andFIG. 23B.) For example, taking typical values λ˜500 nm (for NbN) andt˜50 nm gives L_(s)˜6 pH. With such a high-inductive layer, it is easyto construct a quantizing inductance ˜20 pH using e/w˜3 squares.

In prior art RSFQ processes, a typical low-inductance layer (comprisedof Nb) might exhibit an inductance per square less than ˜1 pH. One cancertainly construct an inductance ˜20 pH with such a layer, but it willnot be compact. It is important to appreciate that a high-inductancelayer cannot properly be used for general connection of Josephsondevices in RSFQ circuits, because such a connection would lead tounintended bistable quantizing loops where none were intended. So apractical RSFQ circuit can take advantage of such a high-inductive layeronly if there is at least one other low-inductance layer available. Sucha combination of both a low-inductance layer and a high-inductance layerhas not been available in the design of prior art RSFQ circuits. Thepreferred examples of Nb and thin NbN layers, appropriately separated byinsulating layers (such as SiO₂), are fully compatible and easilycombined in an integrated multilayer process (see, e.g., U.S. Pat. No.5,962,865, expressly incorporated herein by reference).

A further advantage of a high-inductance layer is that it can be used torestrict propagation of ps pulses on DC bias lines. In RSFQ circuits, asuperconducting ground plane is used for shielding of electrical andmagnetic signals from different parts of the circuit. In this case, allsuperconducting interconnects and bias lines are effectively low-lossmicrostrip transmission lines. Such passive transmission lines are usedfor transporting signals between different parts of the circuit at highspeeds, but bias lines used for DC power distribution should notpropagate these signals. In conventional RSFQ circuits, resistors can beinserted to block such pulses, but they will also dissipate power. Inenergy-efficient RSFQ circuits, such resistors are avoided. Instead, onecan insert a short section of an inductive line with a sharply differentcharacteristic impedance for ps pulses, which creates a mismatch thatrestricts pulse propagation. Such a mismatch can be easily designedusing a short length of a high-inductance layer of the presenttechnology.

III. Hybrid Superconducting-Magnetic Memories Based on MagneticJosephson Junctions

The most natural hybrid superconducting-magnetic memory technology isone that builds the magnetic memory element right into the basicsuperconducting component, the Josephson junction. Such a magneticJosephson junction (MJJ) has recently been developed in the prior art(see, e.g., US Patents 2012/0184445; 2012/0302446; expresslyincorporated herein by reference), but its integration withenergy-efficient RSFQ technology for large magnetic random accessmemories (MRAMs) is still being refined. Such a hybrid integrated MRAMmay be called SPEED-MRAM, for SuPerconducting Energy-Efficient DenseMRAM. Several preferred embodiments of SPEED-MRAM are disclosed below.

First, several alternative MJJ vertical stacks are considered (see FIG.4). These are known as SIsFS, SIsFsFS, and SFIFS, where an SIS stack(superconducting/insulating/superconducting tunnel junction) is aconventional Josephson junction. Here S represents a strongsuperconductor such as Nb, I represents a thin insulator such as 1-2 nmof Al₂O₃, F represents a thin ferromagnetic layer, such as Ni, or Pdwith 1% Fe (denoted in FIG. 3 as PdFe) that is ferromagnetic atcryogenic temperatures. Small s represents a weak superconductor, suchas an ultrathin layer of Nb strongly coupled to an F layer. FIGS. 5A and5B shows a prototype SIsFS MJJ switched repeatedly back and forthbetween the zero-voltage and the finite voltages states using anexternal weak magnetic field (see T. Larkin, et al., “FerromagneticJosephson switching device with high characteristic voltage”, Appl.Physics Letters, vol. 100, 222601, May 2012). This is not an optimizedfast-switching memory cell (note the time scale of seconds), butillustrates the basic principles. Based on these preliminary results,one can project that this device is scalable down to submicrondimensions, and is electrically and technologically compatible with RSFQcircuits. Specifically, the MJJ switching voltage ˜0.5 mV is of theproper magnitude for reading with and writing to RSFQ circuits, and theMJJ devices can be fabricated as part of the same integrated circuit asRSFQ circuits.

Another MJJ-based structure is a three-terminal device, thesuperconductor-ferromagnet transistor (SFT), with a stack SFIFSIS, whereeach of the three superconductor layers is a separate terminal (see FIG.7A-7C). Here the SIS junction is a Josephson junction, and the SFIFSjunction serves as an injector to switch the Josephson junction on andoff. (See, G. Prokopenko, et al., “DC and RF measurements ofsuperconducting ferromagnetic multiterminal devices”, Proc. 2013 IEEEInternational Superconductive Electronics Conf., expressly incorporatedherein by reference) This is analogous to a semiconductor transistor,and shows a similar isolation between input and output. This providesthe basis for an MJJ cell selector.

Another embodiment of the invention comprises an MJJ memory array, withRSFQ write and readout. These enable an MRAM with ultra-small cell area,defined only by the small MJJ size (which can be deep submicron), andenergy dissipated only during Write and Read ‘1’ operations. Only simpleline drivers are required for Write and Read operations. Furthermore,the switching time of an MJJ is ˜1 ps with a switching energy ˜0.1 aJ,comparable to those of a conventional SIS Josephson junction employed inlow-power SFQ circuits. This enables MJJs to be used as programmableJosephson junctions, a new feature in superconducting electronics notpreviously available. Two alternative preferred readout designs arepresented, both leading to extremely energy-efficient, small-area, fastmemory cells suitable for dense, scalable MRAM designs. These areapplicable for cache, main memory, and possibly even for multi-portregister files. The first design (FIGS. 7A-7C, see also FIGS. 25A-25Band later detailed description) is a single MJJ with a ballistic SFQreadout (SFQ-MJJ). The second design (FIGS. 8A-8C) follows a somewhatmore conventional MRAM approach with a single-MJJ cell combined with athree-terminal SFT cell selector (SFT-MJJ). This is also described inmore detail below. (In some cases, an alternative three-terminalnanowire superconducting device, described below, may be substituted forthe SFT.)

A preferred embodiment of an MJJ memory array may further comprise MRAMperiphery circuits, such as an address decoder and a bit-line driver,all implemented using energy-efficient RSFQ logic. These are describedin greater detail in the Detailed Description section below.

IV. Superconducting Interface Circuits for Spintronic Memory Cells

A completely different type of magnetic memory cell is referred to asspintronic, which may comprise a magnetic material with an electronicspin-transfer property. Two such properties are orthogonal spin transfer(OST) and spin-Hall effect (SHE). MRAM arrays based on these effects arebeing developed for semiconductor I/O at room temperature. See, e.g., USPub. Apps. 2012/0294078; 2014/0015074; 2014/0001524; see also, WO2013/025994, all expressly incorporated herein by reference. However, inthe present application, a preferred embodiment of the invention showshow similar cells optimized for cryogenic temperatures (see, e.g., L. Yeet al., “Spin-transfer switching of orthogonal spin-valve devices atcryogenic temperatures”, J. Applied Physics, vol. 115, 17C725 (2014))may alternatively be used as part of a hybrid superconducting-magneticmemory scheme, where low-power superconducting SFQ circuits are used tointerface these cryogenic OST (COST) and cryogenic SHE (CSHE) cells.

These spintronic cells may not be directly compatible with Josephsonjunctions (e.g., due to higher impedance levels for the OST and SHEdevices), so superconductor adaptor circuits may be used for readout andselection. In one preferred embodiment, a memory cell comprises a COSTjunction connected in parallel with an unshunted SQUID via an inductance(see FIGS. 9A-9B), in a configuration known as a Relaxation Oscillator(RO). The operation of this cell is described further below. Onedrawback of this RO-SQUID COST cell is the relatively large device area(as large as 100 μm²) due to the use of two Josephson junctions andinductors.

Two other preferred embodiments (which may be much smaller) make use ofa superconducting three-terminal device for readout and selection. Thesuperconductor NanoWire Device (NWD), also known as the Nano-Cryotron ornTron, is essentially a superconductor transistor comprising a narrowsuperconducting channel (width less than 100 nm) modulated by injectioncurrent from a superconducting gate (see FIG. 10). See A. McCaughan andK. Berggren, “A Superconducting Nanowire Three-Terminal ElectrothermalDevice”, Nano Letters, vol. 14, no. 10, pp. 5748-5753 (September 2014),expressly incorporated herein by reference. This structure is animprovement upon earlier prior art superconducting three-terminaldevices, see, e.g., O. Quaranta, et al., “Superconductive three-terminalamplifier/discriminator”, IEEE Trans. Appl. Supercond., vol. 19, p. 367(2009). A preliminary test of this new device, fabricated from thin NbNfilm, was able to provide output currents of 40-80 μA to devices withimpedances from 10Ω to 10 kΩ, with a 10 μA input signal, with frequencyresponse up to ˜1 GHz expected.

The NWD can be used with either COST or CSHE cells for cellselection—see cells and arrays in FIGS. 11A-11B and 12A-12B. The CSHE isa three-terminal device that allows decoupling of Read and Writeoperations. For a hybrid CSHE-NWD cell, the NWD is the selection elementfor Write operations (FIGS. 11A-11B). Read operations require a separategrid of impedance-matched lines for transmitting voltage pulses along arow, while sensing their responses along all columns, thus providingword-access memory readout.

Another preferred embodiment is a COST-NWD memory cell and array, asshown in FIGS. 12A-12B. Here, the COST is a two-terminal device,requiring a different readout scheme. The NWD selects a given cell forreading or writing. Once the NWD switches from superconducting toresistive upon activation of the Word Line Select Current (WL), itredirects the Read or Write current to the COST element. When the WLcurrent is off, the NWD quickly returns to the superconducting state.The power is dissipated only at the selected cells during Read or Writeoperation. Since the NWD has a significant power gain, only a very smallcurrent is required to activate it. Furthermore, the NWD and the COSTcan be fabricated with closely matching impedances, much higher thanthat of RSFQ circuits. The NWD and COST can be fabricated side-by-sidein an area less than 4 μm², corresponding to a cell density greater than10 Mbits/cm². The cell size can be reduced even further by placing theNWD selector underneath the COST. Further operation details arepresented below.

Alternatively, these spintronic memory cells may be interfaced with RSFQcircuits using the SFT, the other three-terminal superconducting devicedescribed above as an interface for the MJJ cells (FIG. 8).

V. Cryogenic Multi-Chip Module (MCM) for Hybrid Technology ComputingSystem

The combination of cryogenic operation, ultra-high-speed, andultra-low-power of the hybrid superconducting-magnetic computing devicesand memory make testing difficult, and require developing a newinfrastructure for interfacing these devices with conventionalroom-temperature digital and analog systems. For example, in order toperform a comprehensive characterization of a 64×64 SPEED-MRAM chip atfull speed, one needs to construct an interface capable of sending64-bit words, addresses, and control signals between the chip androom-temperature test instruments. FIG. 13 shows the block diagram for apreferred embodiment of such a prototype test system, comprising twomain parts: a cryogenic (4 K) testbed multi-chip module (MCM), and aroom-temperature FPGA-based (field-programmable gate array) memory testcontroller (MTC). All high-speed parallel data communications andmeasurements are done on the testbed MCM at 4K, while communication withthe MTC occurs via slower serial links. For prior art on high-speedcommunication on superconducting MCMs, see U.S. Pat. No. 8,159,825;6,420,895; 6,580,510, expressly incorporated herein by reference. Seealso, D. Gupta, et al., “High-speed inter-chip data transmissiontechnology for superconducting multi-chip modules”, IEEE Trans. Appl.Supercond., vol. 11, p. 731 (2001); S. Narayana, et al., “Design andTesting of high-speed interconnects for superconducting multi-chipmodules”, Supercond. Sci. Technol., Vol. 25, 105012 (2012), expresslyincorporated herein by reference.

The testbed MCM comprises a superconducting Test Control and Acquisitionchip (TCA), together with a hybrid memory chip that may comprise MRAMcells with superconducting interface circuits. The MRAM cells maycomprise MJJ, COST or CSHE devices. The TCA chip comprises asuperconducting digital processor, comprising proven RSFQ circuitsincluding serializer/deserializer (SERDES) circuits, shift registerbuffers, clock controllers, a time-to-digital converter (TDC), andinterchip communication circuits for 64-bit parallel words with clockrecovery. A functional block diagram of the key components of the TCA isshown in FIG. 14. The TCA chip communicates at MHz rates with the MTCmodule, which loads and unloads 64-bit data words and addresses.

During functional operation, the testbed MCM is maintained at acryogenic temperature, which may preferably be around 4 K. In oneembodiment, the MCM may be immersed in a container of liquid helium. Ina preferred embodiment, the MCM may be mounted inside a vacuum chamberand cooled by thermal conduction to a cold stage of a closed-cyclerefrigerator, also known as a cryocooler. The lines between the MCM andthe MTC module may comprise a plurality of digital electrical RF cableswith low crosstalk and DC bias lines, both designed to minimize thermalconduction or dissipation. In one embodiment, at least one of the DC orRF lines may comprise a high-temperature superconductor which canoperate as a superconductor at a temperature in excess of 20 K. In analternative embodiment, at least one of the lines may comprise anoptical communications medium, such as for example an optical fiber forcommunicating infrared data pulses.

Transmitting 64-bit words from chip to chip at high rates (which mayrange from 20 GHz to 100 GHz or more) is a very challenging task,because of timing uncertainty. In all RSFQ logic, includingenergy-efficient RSFQ, local timing is used, so that the problem ofclock recovery is quite different than that for global timing circuits.FIG. 15A shows a preferred embodiment of a high-speed inter-chipbit-parallel communication system, comprising a clock recovery systemfor SFQ ballistic transmission of a parallel word over long distances.Here the multi-bit data is transmitted from a transmitting chip (Tx) onthe left, to a receiving chip (Rx) on the right, over a parallel set ofpassive transmission lines (PTLs) on the multi-chip module. At the Txside, the data is converted to a dual-rail form, with each bitpropagating along two parallel PTLs; one for ‘1’ and the other for ‘0’.At the Rx side, each ‘1’ line goes to a buffer (First-In, First-Out orFIFO) awaiting release by a recovered clock signal. Furthermore, all ofthe bits on ‘0’ and ‘1’ lines are merged via a binary tree of MullerC-elements, shown in FIG. 15B (also known as confluence buffers, see,e.g., en.wikipedia.org/wiki/C-element;pavel.physics.sunysb.edu/RSFQ/Lib/c.html, expressly incorporated hereinby reference).

The output of this tree comprises the recovered clock pulse, and ensuresthat the latched bits are released only when all bits have successfullyarrived. This should provide a very reliable system for ultra-high-speedbit-parallel communication between superconducting chips. Furtherdetails of the circuit, implemented using energy-efficient RSFQ logic,are presented in the Detailed Descriptions section.

It is to be understood that a preferred embodiment of a system employingsuch a testbed MCM also provides a prototype of a larger-scalesupercomputing system, which would incorporate a plurality of such chipsand MCMs, communicating at high speeds. An MCM could comprise additionalmemory chips on the same MCM, and two or more MCMs could be mounted inclose proximity on the same cryogenic stage; furthermore a system couldcomprise a plurality of digital processors operating in parallel withina common cryogenic environment. Further details are discussed below.

VI. Integrated Circuit Process with both Superconducting Circuits andMRAM Cells

The prior art has disclosed multilayer IC processes for superconductingcircuits, and for MRAM arrays with transistor interfaces. Here, severalpreferred embodiments for fabricating integrated superconducting/MRAMcircuits on the same chip for cryogenic operation are disclosed.

The first preferred embodiment comprises a fabrication system and methodfor combining magnetic Josephson junctions (MJJs), superconductingferromagnetic transistors (SFTs), and non-magnetic Josephson junctions(JJs) together in the same chip, for fabrication of SPEED-MRAM chips(see FIGS. 16 and 17). This process builds on prior art superconductingcircuit processes, and a new planarized multilayer process disclosed ina recent provisional application (D. Yohannes, et al., “Method forincreasing the integration level of superconducting electronics circuitsand a resulting circuit”, U.S. application 61/887,919, filed Oct. 7,2013, and Ser. No. 14/508,514, filed Oct. 7, 2014, each of which isexpressly incorporated herein by reference). This process has been named“Rapid Integration of Planarized Process for Layer Extension”, orRIPPLE. FIG. 17 shows a cross-sectional view of a patterned circuit thatcomprises both a standard SIS Josephson junction, and also an array ofMJJ memory cells. FIG. 17 also shows the steps to produce both an MJJand an SFT.

The second preferred embodiment comprises a fabrication system andmethod for combining COST cells and NWD devices together with moreconventional superconducting circuits on the same chip. This embodiment,shown in FIG. 18, shows a chip cross section for a circuit in which NWDdrivers and COST-MRAM memory cells are fabricated on top ofpre-fabricated planarized Josephson junction (RSFQ) circuits. A similarfabrication process is proposed with the alternative CSHE-MRAM memorycells with NWD drivers. Further details are given below.

It is therefore an object to provide a cryogenic computing system,comprising a high-speed superconducting digital processor, configured tooperate at cryogenic temperatures at a clock rate of at least 20 GHz; anarray of memory cells, comprising a switchable magnetic material,configured to operate at cryogenic temperatures; and superconductinginterface circuits configured to communicate between the array of memorycells and the processor, configured to operate at cryogenictemperatures.

It is also an object to provide a method for fabricating asuperconducting computer, comprising designing a processor usingultrafast energy-efficient superconducting rapid-single-flux-quantumlogic and memory register cells; implementing ultrafast wave-pipeliningin both logic and memory; designing a cryogenic random access memoryarray using switchable magnetic elements (MRAM); designingsuperconducting interface circuits between the processor and the MRAM;fabricating at least one MRAM chip using a deposition process thatincorporates both superconducting and magnetic elements on the samechip; packaging the processor and MRAM chips on at least one multi-chipmodule (MCM); designing and fabricating the MCM to permit ultrafast datatransfer between the processor and MRAM chips; and designing andimplementing a cryogenic system for maintaining the processor and theMRAM at cryogenic temperatures suitable for operation.

It is a further object to provide a superconducting computer, comprisinga processor integrated circuit comprising energy-efficientsuperconducting rapid-single-flux-quantum logic and superconductingmemory register cells, having ultrafast wave-pipelining in both theenergy-efficient superconducting rapid-single-flux-quantum logic and thememory register cells; a cryogenic random access memory array integratedcircuit comprising a plurality of switchable magnetic elements (MRAM),fabricated using a deposition process that incorporates bothsuperconducting Josephson junction and magnetic elements; and at leastone superconducting interface circuit disposed between the processor andthe MRAM; wherein the processor integrated circuit and MRAM integratedcircuit are packaged on at least one multi-chip module (MCM) configuredto permit ultrafast data transfer between the processor integratedcircuit and the MRAM integrated circuit. The superconducting computermay further comprise a cryogenic system configured to maintain theprocessor integrated circuit and the MRAM integrated circuit atcryogenic temperatures suitable for operation of superconducting digitallogic elements.

It is a still further object to provide a processing method, comprisingcooling a cryogenic computing system within a temperature range at whichlow temperature superconducting materials are superconductive, thecryogenic computing system comprising: a superconducting digitalprocessor, an array of memory cells, comprising a switchable magneticmaterial, and superconducting interface circuits configured tocommunicate between the array of memory cells and the processor;transforming at least one digital datum by the superconducting digitalprocessor; transferring the transformed at least one digital datumthrough the superconducting interface circuits; and storing thetransformed at least one digital datum in the array of memory cells.

The digital processor may comprise energy-efficientrapid-single-flux-quantum logic. The digital processor may also comprisean asynchronous wave-pipelined datapath. The digital processor may alsocomprise a plurality of serially biased modular superconductingcircuits. The digital processor further comprise superconductinginductor elements fabricated from at least two distinct superconductorwiring layers with substantially different sheet inductances.

Both the processor and the array of memory cells may be designed andconfigured to operate at cryogenic temperatures less than 10 K.

The sheet inductance of at least one of the wiring layers may bepredominantly due to kinetic inductance.

The array of memory cells may comprise a plurality of memory cells, eachcomprising a Josephson junction having a Josephson junction barrierhaving a thin magnetic layer. The plurality of memory cells may be readout using ballistic single-flux-quantum pulses. Each memory cell of thearray of memory cells may be selected using a three-terminalsuperconducting device. A plurality of memory cells may comprise aplurality of cryogenic orthogonal spin transfer (COST) junctions. Thearray of memory cells may further comprise a plurality ofrelaxation-oscillator SQUIDs, and wherein a respective COST junction isread out using a respective SQUID. A respective COST junction of thearray of memory cells may be selected by a three-terminalsuperconducting device. The array of memory cells may comprise aplurality of cryogenic spin-Hall effect (CSHE) devices. Memory cells ofthe array of memory cells may comprise a CSHE cell selected using athree-terminal superconducting device.

The array of memory cells and the processor may comprise separate chipson respective multi-chip modules (MCMs), the cryogenic computing systemfurther comprising a high-speed parallel communication bus between therespective MCMs. The high-speed parallel communication bus maycommunicate single-flux-quanta on superconducting transmission lines.The high-speed parallel communication bus may comprise a receiver havinga clock recovery circuit.

The computing system may further comprise a room-temperature electroniccontroller, e.g., configured to control the digital processor. Thedigital processor and the room temperature controller may communicatevia serial communications at a substantially lower rate than theparallel communication over the high speed parallel communication bus.

The digital processor and the array of memory cells may compriseintegrated circuit chips, and wherein the fabrication process for theintegrated circuit chips may be compatible with processing of functionalsuperconducting and magnetic elements on the same integrated circuitchip. The digital processor and the array of memory cells may befabricated on a common integrated circuit.

It is to be understood that these preferred embodiments representexamples of computing and memory circuits and systems of the presentinvention, and the invention is not restricted to these examples.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 shows a conceptual diagram of a high-speed energy-efficientsuperconducting microprocessor, comprising an arithmetic logic unit(ALU) and register file, with a wave-pipelined datapath and timingscheme exhibiting skewed words that represent asynchronous propagationof carry bits through the processor.

FIG. 2 shows the modular structure of the register file, with serial DCbiasing of successive registers.

FIG. 3 shows an example energy-efficient RSFQ circuit, with biasinductor and quantizing inductor that might be fabricated from a specialhigh-inductance superconducting layer.

FIG. 4 shows thin-film stacks for several types of MJJ, with the circuitsymbol.

FIGS. 5A and 5B show graphs representing a prototype SIsFS MJJ switchedrepeatedly back and forth between the zero-voltage and the finitevoltage states using an external weak magnetic field.

FIGS. 6A-6B show a 3-terminal MJJ structure, thesuperconductor-ferromagnet transistor (SFT), with a stack SFIFSIS, whereeach of the three superconductor layers is a separate terminal, togetherwith its circuit symbol.

FIGS. 7A-7C show a single MJJ with a ballistic SFQ readout (SFQ-MJJ),together with a schematic of a memory array.

FIGS. 8A-8C show an alternative single-MJJ cell combined with athree-terminal SFT cell selector, and a memory array of such cells.

FIGS. 9A-9B shows a further alternative memory cell comprising a COSTjunction connected in parallel with an unshunted SQUID via an inductancein a configuration known as a Relaxation Oscillator (RO).

FIGS. 10A and 10B shows a superconductor NanoWire Device (NWD),comprising a narrow superconducting channel (width less than 100 nm)modulated by injection current from a superconducting gate (FIG. 10B),together with its symbol (FIG. 10A).

FIGS. 11A and 11B show a hybrid CSHE-NWD cell, where the NWD is theselection element for Write operations, together with a proposed cellarray architecture.

FIGS. 12A and 12B show a COST-NWD memory cell and array.

FIG. 13 shows a block diagram for a prototype test system, comprising acryogenic (4 K) testbed multi-chip module (MCM), and a room-temperatureFPGA-based memory test controller (MTC).

FIG. 14 shows a functional block diagram of the key components of thecryogenic test control and acquisition chip (TCA), which communicates athigh speed with the MRAM chip but at lower speed with theroom-temperature controller.

FIG. 15A shows a functional block diagram of bit-parallel chip-to-chipcommunication on an MCM from a transmitter (Tx) on the left via PTLs toa receiver (Rx) on the right, with clock recovery at the receiver.

FIG. 15B shows the RSFQ circuit schematic for a Muller-C element.

FIG. 16 shows a cross-sectional view of a patterned circuit thatcomprises both a standard SIS Josephson junction, and also an array ofMJJ memory cells.

FIGS. 17A-17D show the steps to fabricate a circuit with both an MJJ andan SFT.

FIG. 18 shows a chip cross section for a circuit in which NWD driversand COST-MRAM memory cells are fabricated on top of pre-fabricatedplanarized Josephson junction (RSFQ) circuits.

FIGS. 19A-19B shows the schematic circuit and functional behavior of anERSFQ half-adder cell.

FIG. 20 shows the block diagram of an energy-efficient ALU.

FIGS. 21A and 21B show how a simple RSFQ circuit (21A) is modified tobecome an energy-efficient ERSFQ circuit (21B) with zero static powerdissipation.

FIGS. 22A and 22B show the circuit layout and block diagram of anERSFQ-8-bit wave-pipelined adder.

FIGS. 23A and 23B show a cross section of a superconducting multilayerprocess with a low inductance that is predominantly magnetic inductance(23A, left) and an alternative process with a high-inductance top layerthat is predominantly kinetic inductance (23B, right).

FIGS. 24A-24C shows an MJJ structure with one magnetic layer (24A) analternate MJJ structure with two magnetic layers (24B), and theelectrical behavior of a corresponding junction in magnetic field (24C).

FIGS. 25A and 25B shows the ballistic memory readout architecture forthe SFQ-MJJ MRAM of FIG. 7 for a “0” and “1” state, respectively.

FIGS. 26A and 26B show a schematic for a bit-line driver of a Writecircuit for an MRAM array.

FIGS. 27A and 27B shows schematic of a row of an ERSFQ address decoderfor an MRAM array, and a layout of a full decoder.

FIGS. 28A and 28B show an example of a cryogenic system on a cryocoolerthat may support a hybrid superconducting/magnetic memory array anddigital processor. Left (28A) system overview; Right (28B) Detail ofcryogenic stage including active magnetic shielding.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

I. Superconducting Energy-Efficient Wave-Pipelined Digital Processor

FIG. 1 shows a conceptual diagram of the wave-pipelined datapath andtiming scheme for a proposed high-speed energy-efficient superconductingmicroprocessor, comprising an arithmetic logic unit (ALU) and registerfile, with skewed words that represent asynchronous propagation of carrybits through the processor. This multibit ALU comprises a cascade of1-bit ALUs, and one of its unique features is that both the instructionand the carry bit cascade asynchronously through the ALU. Thisarchitecture combines the timing advantage and modular scaling found ina ripple adder with the speed advantage of asynchronous circuitry.

A block diagram of the architecture of the register file is shown inFIG. 2. This consists of an array of 128 registers, each with anidentical modular structure, designed for a 64-bit word. Since the biascurrent for each of these is the same, this enables the current bias foreach register to be supplied in series from one to the next, known as“current recycling”. The bias current for each register enters through apower line and drains to the ground plane, so this requires that theground plane for a given register be connected through a via to thepower line of the succeeding register. In addition to reducing the totalbias current for the register file by the factor of 128, this schemedecouples the phases of each register's ERSFQ bias line, so that onlythe accessed register will dissipate power, thus also reducing the totalpower by the factor of 128. Note also that SFQ pulses may freelytraverse from one register to the next, despite the offset in DCvoltage.

The basic element of the ALU is an ERSFQ half-adder cell (see FIGS.19A-19B). Here the addend bits A and B are added, together with theCarry bit. The output is triggered by the arrival of the Clock pulse,generating the Sum output at the bottom. A key feature of this cell isits asynchronous Carry signal, which is not latched to a clock signal,and is therefore produced as soon as both ‘1’ arguments arrive at theALU. This property allows Carry signals to propagate in the form of awave (wave-pipelining).

A portion of the detailed block diagram of the 8-bit energy efficientALU is shown in FIG. 20, comprising repeated half-adder units (HA). Theinstruction select is implemented through a switch cell (Sw) that relaysSum and Carry signals from the first stage Half Adder to the secondstage, and provides for executions of such instructions as ADD, XOR,AND, and OR. In combination with selective inversion of the operands,this results in a broad instruction list. This novel ALU architectureexploits the advantages of local timing in an ERSFQ ALU by propagatingan instruction code and a clock signal together from LSB to MSB of theoperands.

This same “skewed word” approach (see FIG. 1) is used in reading fromand writing to a register file as well, providing extremely highthroughput. The short vertical dimension of the ALU provides a very lowlatency (˜80 ps in simulation), where latency is defined as the“turnaround time” between the start of loading the LSBs of the operands,and receiving an output LSB. The wave propagation time from LSB to MSBis simulated to be ˜400 ps for the 8-bit ALU, but this does not affectthe performance of the wave-pipelined datapath.

Both the throughput and the energy performance of this ALU are orders ofmagnitude superior to ALUs in other technologies. For example, an 8-bitversion of the ALU based on current fabrication technology (not fullyoptimized) was simulated on a circuit level, and found to operate at aclock frequency of 44 GHz, giving a throughput of 3.5×10¹¹ bit-ops/sec.The bias current drawn by one bit slice of this design is 50 I_(Cmin),where I_(Cmin) is the critical current of the smallest Josephsonjunction in the design. Taking the switching energy to be I_(C)Φ₀ andusing a minimum I_(Cmin)=38 μA gives 2.5×10¹⁷ bit-ops/Joule as theenergy performance of this ALU. By virtue of the modular architecture,the speed and energy per bit are independent of the word size, enablingscaling to 64 bits.

FIGS. 21A-21B shows how a simple RSFQ circuit (a unit of a Josephsontransmission line or JTL) on the left transforms to an energy-efficientERSFQ design on the right. The junction switching dynamics (with SFQswitching energy ˜I_(b)Φ₀) and dynamic power dissipation are the same inboth cases. The only difference is that the static power dissipationP_(S) in the bias line is eliminated by replacing the bias resistorR_(bias) by a series combination of a Josephson junction (with criticalcurrent I_(c)=I_(b)) and an inductance L_(bias). This enables the biasvoltage to be reduced by a factor ˜50, reducing the system powerdissipation by a similar factor. Switching of the current-limiting biasjunction will compensate for imbalance of average voltages acrossdifferent bias terminals. Standard RSFQ cells which have already beendeveloped can be modified to ERSFQ circuits by this simple resistorreplacement.

FIGS. 22A and 22B show the circuit layout and block diagram of aprototype ERSFQ 8-bit wave-pipelined adder. This is comprised ofmultiple identical half-adder modules of FIG. 18 (symbolized by HA inthe schematic) connected in a tree structure as shown. This comprises˜2000 Josephson junctions, and this prototype operated at a clockfrequency of 20 GHz with a dissipation of 0.36 fJ per operation, provingthe viability of this wave-pipelined, low-power approach for larger andfaster superconducting processors.

II. High-Inductance Wiring Layer for Energy-Efficient RSFQ Circuits

RSFQ electronics deals with the storage and transfer of magnetic singleflux quanta (SFQ) with flux Φ₀=2 mV-ps=2 mA-pH. A loop comprising twoJosephson junctions and an inductor L can store a flux quantum ifLI_(C)˜Φ₀, where I_(C) is the critical current of the Josephsonjunctions. In transporting an SFQ from one portion of the circuit toanother, it is critical that the SFQ not be trapped in unintendedinductors, so that normally LI_(C)<<Φ₀. In contrast, some loops aredesigned as storage elements, in which case we want a quantizinginductance L_(q)=Φ₀/I_(C)˜20 pH if I_(C)˜0.1 mA.

FIG. 23A (left) shows the cross-section of a typical superconductingconnecting layer above a superconducting ground plane in an integratedcircuit process, where we assume that both superconductors comprise Nb,which has the highest critical temperature (9.2 K) of any simpleelemental metal, and operates well at 4-5 K. Each film may be t˜200 nmthick, and they are separated by an insulator (such as SiO₂) ofthickness d˜200 nm. The magnetic penetration depth λ of Nb is ˜100 nm;this is the thickness on the surface of a superconductor in which thecurrents flow. Consider the inductance of a parallel-plane structure oflength l and width w, where we assume that w>>d so that edge effects maybe neglected. Then the inductance can be given as L=(l/w)L_(s), whereL_(s)=μ₀(λ₁+λ₂+d) is the sheet inductance or inductance per square ofthe line. Here λ₁ is the penetration depth of the top superconductor andλ₂ that of the bottom superconductor. The magnetic field produced by thecurrent lies in the insulator, and penetrates into the superconductorwithin λ of the surface. The contribution μ₀d to L_(s) is purelymagnetic inductance, while the contributions μ₀λ corresponding to thesuperconducting films (much thicker than λ) are half magnetic and halfkinetic inductance. In the example here, L_(s)=0.5 pH/square, of whichabout 75% is magnetic inductance and 25% kinetic inductance. TakingI_(C)˜0.1 mA, the quantizing inductance would be L_(q)˜20 pH. Shortlengths of the line will have L<<L_(q), so that it is easy to lay outnon-quantizing loops. Quantizing loops, however, will tend to be long.In prior art superconducting integrated circuits, there may be two ormore superconductor wiring layers, each separated by insulators ofvarious thicknesses. Various combinations of these layers will lead todifferent values of L_(s), but they are all fairly small andpredominantly magnetic.

In contrast, consider the cross-section in FIG. 23B (right), where thetop superconductor wiring layer now comprises a thin film with thicknesst<<λ. In this limit, the sheet inductance due to this top superconductoris given by μ₀λ²/t, virtually all of its kinetic, and the current flowsuniformly within the film. The total sheet inductance is thenL_(s)=μ₀(λ₁ ²/t₁+λ₂+d). If this top film is made from NbN with λ₁=500 nm(depending on deposition conditions) and take t₁=50 nm, then L_(s)˜6.7pH, of which 95% is kinetic and 5% magnetic inductance. Furthermore,this thin top layer will also be able to carry a sufficiently largesuperconducting current at 4 K, since the superconducting criticaltemperature of NbN is somewhat higher than that of Nb (10-15 K,depending on deposition conditions). An inductor made with this layerwill be ideal for designing a compact quantizing inductor L_(q), as wellas a compact bias inductor L_(b), which may have a value that iscomparable or larger than this quantizing inductor.

A further advantage of the use of an inductor that is primarily kineticinductance is that it will have substantially reduced magnetic mutualinductance with other lines and with external fields, as compared with apredominantly magnetic inductance of the same value. This isparticularly important for energy-efficient RSFQ, where the bias currentin a given line is set by an inductor (rather than by a resistor as withconventional RSFQ), and parasitic mutual inductance may alter the biascurrent.

A further aspect of the availability of a high-inductance layer is thatone may design a passive transmission line (PTL) with a highercharacteristic impedance Z₀ for the same dimensions. SinceZ₀=(L/C)^(1/2), increasing L by a factor of 13 increases Z₀ by a factorof 3.5. This may offer additional flexibility in design of PTLs, whichare used in energy-efficient RSFQ to transport signals over significantdistances on chip with negligible dissipation. Further, one can takeadvantage of such a difference in Z₀ to deliberately introduce amismatch that prevents launching of a pulse on a PTL. For example, biaslines are essentially PTLs, but in conventional RSFQ, a bias resistornear the bias current insertion point acts to block the launching of anSFQ pulse onto the bias line (see FIG. 21A). In contrast, inenergy-efficient RSFQ, a bias inductor is used instead of a biasresistor. If a compact bias inductor is also located near the biascurrent insertion point (see FIG. 21B), the impedance mismatch can alsoact to block the SFQ pulse from being launched onto the bias line. Thismay help to avoid possible crosstalk via bias line coupling.

A further advantage to a high-inductance layer is that it may be used toconstruct other superconducting devices that may be integrated with RSFQdigital circuits. For example, a superconducting nanowire single photondetector (SNSPD, also called SSPD or SNAP) is typically constructed froma thin NbN layer with a very high sheet inductance. See D. Gupta,“Single photon counting hotspot detector with integrated RSFQ readoutelectronics,” IEEE Trans. Appl. Supercond., vol. 9, p. 4487 (1999),expressly incorporated herein by reference; see also U.S. Pat. Nos.6,812,464; 7,049,593; 8,565,844; 2012/0077689; 2013/0143744, expresslyincorporated herein by reference. Further, a similar NbN layer may beused to construct a three-terminal NanoWireDevice (FIGS. 9A and 9B),which operates as a transistor and may be used as cell selector forspintronic memory cells interfaced with RSFQ circuits (FIGS. 10A, 10Band 11A-11B). The availability of such a layer permits these and otheressentially analog devices to be closely integrated with RSFQ digitalcircuits.

III. Hybrid Superconducting-Magnetic Memories Based on MagneticJosephson Junctions

One preferred embodiment comprises a class of hybridsuperconducting-magnetic memories based on magnetic Josephson junctions(MJJ) and superconductor-ferromagnetic transistors (SFT). This memorytechnology has been called “SPEED-MRAM”, for SuPerconductingEnergy-Efficient Dense MRAM. For its Read and Write functions,SPEED-MRAM comprises memory cells that are integrated with eSFQ or ERSFQenergy-efficient peripheral circuitry. To fabricate SPEED-MRAM, a newfabrication process integrates MJJs, SFTs, and SFQ digital processorcircuits and periphery circuits in the same fabrication cycle.

SPEED-MRAM is dense, scalable, and operates at high speed. A memory cellconsists of a single small MJJ, with optional cell selector, so thatdensity scales with the microfabrication technology. There are no poorlyscalable elements, such as SQUIDs. Furthermore, SPEED-MRAM isarchitecturally compatible with SFQ technology, since signal levels andimpedances are similar. Finally, SPEED-MRAM is energy-efficient; theRead operation is performed with an SFQ pulse, and consumes energy onlywhen ‘1’ is read out. A low Write energy is achieved by employing amagnetic junction barrier that is a soft magnetic material with a lowcoercivity. Periphery circuits are realized with energy-efficient SFQlogic.

A preferred memory element in SPEED-MRAM comprises a magnetic Josephsonjunction (MJJ) that is comprised of vertical stacks of superconducting,magnetic, and insulating layers (S, F, and I), such that there is asuperconducting critical current I_(C) that is ˜0.1-0.5 mA (or evensmaller), and a normal-state junction resistance R_(n) such thatI_(C)R_(n)˜0.5 mV, similar to that of Josephson junctions inconventional RSFQ. Since Φ₀=2 mV-ps, the switching speed is ˜4 ps.Preferred stacks are SIsFS, SIsFsF, and SF₁IF₂S (see FIG. 4), wheresmall s represents a very thin superconducting layer that is weaklysuperconducting due to the proximity of a magnetic layer. A preferredsuperconducting layer is Nb; a preferred I layer is a tunnel barrierAl₂O₃, which may be produced by oxidizing a thin layer of Al, and may beonly ˜1-2 nm thick. The magnetic layer is preferably ferromagnetic, withone preferred composition (which is not unique) comprising magneticallysoft dilute Pd_(0.99)Fe_(0.01) alloy. The MJJ critical current IC canchange reversibly due to the magnetic state of the F layer(s), whichconstitutes a memory cell. A non-destructive readout of such a cell isobtained using SFQ switching. The state of the magnetic layer can berewritten using a somewhat larger current pulse.

Note that an SIsFS MJJ comprises a series combination of an SIs junctionand an sFS junction, but the entire structure behaves as a singlejunction with a single value of I_(C). The magnetization of the F layerproduces magnetic flux Φ which is preferably parallel to the plane ofthe junction, and modulates I_(C) of the junction. FIGS. 5A and 5B showsan experimental prototype comprising such an SIsFS junction where S ands are Nb, I is Al₂O₃, and F is Pd_(0.99)Fe_(0.01), data from T. Larkinet al., “Ferromagnetic Josephson Switching Device with HighCharacteristic Voltage”, Appl. Phys. Lett., vol. 100, 222601 (2012),expressly incorporated herein by reference. Here the V(I) curves are foran MJJ (open circles) and for a similar junction but without the Flayer. The switching data on the right show the voltage for an MJJ whichexhibits two critical currents I_(C0)>I_(C1), depending on themagnetization of the F layer. The junction is biased at a current Ibetween I_(C0) and I_(C1), so that if the MJJ has the higher value ofI_(C), its voltage is zero (‘0’ state), while if the MJJ has the lowervalue of I_(C), its voltage is nonzero (‘1’ state). Therefore, a weakmagnetic field pulse can switch the MJJ between the ‘0’ state and the‘1’ state, repeatedly and reproducibly. Specifically, a positive fieldpulse switches the MJJ from the ‘0’ to the ‘1’ state, while a negativefield pulse switches the MJJ from the ‘1’ state to the ‘0’ state. Thisjunction is hysteretic, but it can be converted to a non-hystereticjunction more appropriate to RSFQ circuits, by shunting with a smallresistor, as is known in the prior art.

A detailed theory of the critical current of similar SIsFS structureswas recently presented in Bakurskiy et al., “Theoretical model ofsuperconducting spintronic SIsFS devices”, Appl. Phys. Lett., vol. 102,192603 (2013); and in Vernik et al., “Magnetic Josephson junctions withsuperconducting interlayer for cryogenic memory”, IEEE Trans. Appl.Supercond., vol. 23, 1701208 (2013), expressly incorporated herein byreference. Other recent research (see L. Uspenskaya, et al., “Magneticpatterns and flux pinning in PdFe-Nb hybrid structures”, JETP Lett.,vol. 97, p. 155 (2013), expressly incorporated herein by reference) hasshown that the effective magnetization in the dilute ferromagnetic layeris controlled by the presence of Fe-rich Pd₃Fe nanoclusters, which canbe easily reordered by a weak magnetic field. This suggests possiblescalability issues of SIsFS memory elements in submicron junctions.Further, the contribution to the net magnetic flux inside the junctionbecomes smaller with decreasing cross-sectional area of the junction. Inorder to maintain a flux ˜Φ₀/2, the composition and thickness of the Flayer may need to be changed in smaller junctions. For example, the Fecontent in the dilute PdFe alloy may need to be increased, oralternatively, one could split the F layer into two layers separated byanother s layer, creating an SIsFsFS stack. This memory layerprogression is shown in FIG. 4. These two F sublayers could be eitherparallel or antiparallel in their magnetization, corresponding todifferent values of flux in the junction

Another preferred embodiment of the MJJ is shown in FIGS. 24A-24C whichincorporates two ferromagnetic layers F₁ and F₂ in a basic structureSF₁IF₂S. In some cases a thin normal (N) layer (such as Cu) may also beintroduced between F layers to decouple them.

FIGS. 26A-26B also show the current-voltage characteristic of aprototype Nb/Ni/AlOx/Ni/Nb MJJ device, 10 μm square, at 4 K. Thecritical current is strongly modulated with a relatively weak magneticfield, due to the magnetization in the Ni layers. See Prokopenko, etal., “DC and RF measurements of superconducting-ferromagneticmulti-terminal devices”, Proc. IEEE 14^(th) Int. SuperconductiveElectronics Conf. (2013), expressly incorporated herein by reference.

The functioning of this MJJ embodiment is believed to be due to rotationof the magnetization of one F layer relative to the other. For example,the bottom F layer (F₁ in FIGS. 24A and 24B) may have a fixedmagnetization direction, which may be produced by applying a magneticfield of about 5 mT during layer deposition to establish an easy axis ofmagnetization parallel to the field. In contrast, the magnetization ofthe upper F layer (F₂) may be able to rotate relative to that of F₁.Note that an antiparallel arrangement will correspond to a smaller fluxin the junction and hence a higher critical current, as compared with aparallel arrangement.

This rotation of magnetization in one of two magnetic films is similarto the behavior of conventional magnetic spin valves. See, e.g.,en.wikipedia.org/wiki/Spin_valve, expressly incorporated herein byreference. Spin valves typically incorporate an extra antiferromagnetic(AF) layer to pin the magnetization of an F layer using the exchangebias effect. An alternative strategy without an AF layer is preferred,whereby F₁ is designed to have a higher coercive force than that of thefree F₂ layer. Hence for a magnetic field exceeding the coercive forceof the F₂ layer but less than that of F₁, the former will switch,leaving the latter unaffected. For example, if a CuNi alloy is used forthe F layers, a thin permalloy (Py) layer on the top CuNi layer may leadto a coupled film with reduced coercive field.

A further preferred embodiment of an MJJ comprises adouble-tunnel-junction structure that functions as a three-terminalsuperconducting device, with an injector junction that modulates thecritical current of a Josephson junction. The critical current of aconventional Josephson junction may be modulated by an external magneticfield, but that inductive coupling may not be fully scalable to smallsubmicron junctions. The SISFIFS device of FIGS. 6A-6B, also known as aSuperconductor-Ferromagnet Transistor or SFT, provides scalablemodulation with good input/output isolation. See Nevirkovets, “Hybridsuperconductor-ferromagnet transistor-like device”, Supercond. Sci.Technol., vol. 24, 024009 (2011), and Prokopenko (2013), expresslyincorporated herein by reference. The SFIFS junction represents theinjector junction, whereby the introduction of the thin F layersubstantially improves the isolation from the SIS acceptor junction. Theinjector junction may have zero critical current (if the thicknesses ofthe F layers are large enough), but the acceptor junction may be astandard Josephson junction, which may be non-hysteretic or hystereticin its V(I) relation. If it is hysteretic, it may be made non-hystereticusing a resistive shunt as is known in the prior art. Very recently,Prokopenko et al (2013) showed 30 dBV input/output isolation and a gainof 1.25.

FIGS. 6A-6B show the SFQ-MJJ memory cell and a cell array organizationin model and schematic form, which may be based on SIsFS junctions. Theentire memory cell comprises just a single MJJ. The cells are seriallyconnected to form a bit array column. The key feature of this design isthe column layout implemented as a microstrip passive transmission line(PTL) formed by the connected superconducting electrodes of the MJJsover a superconducting ground plane. FIG. 7B shows a perspective view ofthe layer structure of the SFQ-MJJ cell. This shows the Word Select Line(WL) and Bit Line-Write (BL-W) on top for clarity, although these mightbe underneath the junction in a real device. The WL is a current linecontrolled by a JJ-based current-loop line driver; see FIGS. 26A and26B, described in more detail below. For the Write operation, BL-W andWL current lines intersect with current pulse shapes indicated in FIG.7C.

A key innovation of this preferred embodiment of an SFQ-MJJ memory cellis the ballistic SFQ readout (FIGS. 25A and 25B), in which interrogatingSFQ pulses propagate along the bit column PTL. In the superconductingstate, an MJJ is equivalent to a nonlinear inductor with a Josephsoninductance L_(J)˜(Φ₀/2π)(I_(C) ²−I_(b) ²)^(−1/2). Each readout column isa PTL comprising the distributed inductance of the junctions and theirelectrodes, together with the distributed capacitance betweenmicrostrips and the ground plane. For the word (row) selection, a WLcurrent is applied to induce a reference magnetic field to theintersecting MJJs. All other rows of MJJs will be in the high-I_(C)state. This puts the selected MJJs into a state with two clearlydistinguishable values of I_(C), depending on the MJJ magnetizationstate. If the I_(C) of the MJJ is high (stored ‘0’), then the Read SFQwill traverse the MJJ and will continue its propagation down the columnPTL to the Sense Circuit on the bottom. If the I_(C) of the MJJ is low(stored ‘1’), then the Read SFQ pulse will exceed the I_(C) of the MJJ,causing the junction to switch, and the SFQ pulse will escape from thePTL. This is equivalent to the PTL temporarily opening, causing thepropagating pulse to be destroyed. Simulations show that this process isquite robust, although it will create weak reflections and ripples atthe PTL output and input, which can be easily discriminated by the SenseCircuit, which comprises a one-junction SFQ receiver. The Read processis entirely ballistic and is free of half-select problems; energy isdissipated only during reading out a ‘1’. The critical current of MJJscan be somewhat lower than typical for RSFQ circuits (˜100 μA), sincethe bit-error-rate (BER) of SFQ transmission is quite low. MJJ isprojected to be I_(C)s˜10 μA or even lower, which makes the read energyof a ‘1’ E=Φ₀I_(C)˜10⁻²⁰ J.

The cell area of an SFQ-MJJ is very small, less than 1 μm². Evenaccounting for a larger pitch to avoid intercell crosstalk in an MRAMarray, the resulting density should exceed 10⁷ bits/cm². Thesesuperconducting PTLs should be practically free of loss and dispersion,but if necessary one could include periodic Josephson junction repeatersto regenerate the Read SFQ pulse. For example, one could include twoJosephson junctions every 16 MJJs in the column. This would notsubstantially reduce the MRAM memory density.

The line drivers for the BL-W bit lines are shown schematically in FIGS.26A and 26B. These are designed using a new energy-efficient currentsteering technique. The current steering is accomplished using two SQUIDself-resetting switches, steering DC current to either of twosuperconducting bit lines. All bit lines are connected serially andshare the same DC bias, with energy dissipated per switching event˜LI_(b) ²/2. The power dissipation occurs only during a switching eventfrom ‘1’ to ‘0’ or ‘0’ to ‘1’, and power is not dissipated once theswitching process is completed. This approach results in substantialpower savings compared to prior-art SQUID stack drivers, whichdissipated power while the state was ‘1’.

Another important RSFQ periphery circuit for the MRAM is an addressdecoder, shown in FIGS. 27A and 27B, which shows the detailed circuitschematic of a single row in FIG. 27A on the left, and the layout of aprototype 4-bit decoder in FIG. 27B on the right. This N-to-2^(N)decoder was designed using energy-efficient ERSFQ logic, with specialattention towards reduction of its circuit complexity and layout area.The required bit decoding function is achieved with only 3 junctions perbit line. The layout of the 4-bit decoder made use of Gray-codeaddressing, and used only 140 aJ of power. Both power and area areexpected to be reduced further in a fully optimized process.

FIGS. 8A-8C shows an alternative MRAM memory architecture that usesSFT-MJJs, where the SFT acts as a cell selector. The SFT-MJJ cell isformed by a single MJJ and SFT cell selector connected in parallel (seeFIG. 8A). These cells are serially connected to form an array column. Asthe SFT has shown excellent I/O isolation, this cell selector may befunctionally similar to an FET in conventional room-temperature MRAMcells. FIG. 8B shows the layer structure of an SFT-MJJ memory cell, inwhich both devices are fabricated in the same in-situ process andarranged vertically. (Further details on the Fabrication are givenbelow.) It is important to note that the SFT-MJJ is not a SQUID, in thatthe loop inductance is very small, so that the two branches of theJosephson junction are essentially in phase. When the Read current isapplied to the BL-Read line, the current splits and distributes in eachcell in accordance with the I_(C) of each branch. Therefore, anyreduction in I_(C) of one branch will redistribute some current to theother branch.

During the Read process, a WL-Read current is applied to the SFTinjector in selected Word cells. This action suppresses I_(C) of the SFTacceptor junction, and increases the BL current portion flowing throughthe MJJ branch. This current increase is designed so as to trigger theMJJ into a resistive mode if ‘1’ is stored (low I_(C) of the MJJ), or itwill stay in the superconducting state if ‘0’ is stored (high I_(C) ofthe MJJ). One can read the corresponding voltages at the top of theBL-Read line using a simple voltage sense JJ circuit. Simulations showthat the optimum ratio between the nominal I_(C) of the MJJ and SFTacceptor is 5:1. This leads to 50% modulation of the I_(C) of the MJJ,which in turn leads to ±30% margins in the BL-Read current. The voltageacross the MJJ will not leak to other word cells (half-selected), nor toany other columns due to the isolating properties of the SFT. The linedrivers are identical to those described above for the SFQ-MJJ cellarrays. For the Write operation, intersecting BL-W and WL current lineswith current pulse shapes are used, as shown in FIG. 7C.

In this current Readout mode, the energy consumed is somewhat largerthan that of the SFQ-MJJ cells using the ballistic SFQ readout, by afactor ˜10, but still quite small. The Write energy is essentially thesame as for the SFQ-MJJ cells. The cell area for the SFT-MJJ cell willbe somewhat larger than that of the SFQ-MJJ cell, if they are fabricatedside-by-side as shown in FIG. 7B. However, an alternative fabricationmay allow them to be stacked vertically, yielding a very similar bitdensity ˜10⁷ bits/cm².

IV. Superconducting Interface Circuits for Spintronic Memory Cells

As an alternative embodiment to MJJ-based memory cells described above,one can use spintronic MRAMs (based on electron spin transfer inmagnetic materials) that are specially designed to operate at cryogenictemperatures of 4 K and be compatible with superconducting interfacecircuits. Preferred embodiments are cryogenic implementations oforthogonal spin transfer (OST) and spin-Hall effect (SHE), and arereferred to as COST and CSHE.

FIGS. 9A-9B show a memory cell that comprises a COST junction (calledOSTJ in FIG. 9A) connected in parallel with an unshunted SQUID (withhysteretic Josephson junctions) and an inductance L. When the currentfrom the word line selects the corresponding SQUID, its unshunted JJsswitch to the voltage state, forcing the bit line current to flowthrough the OSTJ. By changing the polarity of the bit line current, wecan magnetize (Write ‘1’) or demagnetize (Write ‘0’) the OSTJ. In orderto read out, we apply approximately half of the Write current to the bitline and excite the SQUID with a short pulse through the Word line. ASQUID shunted through with an R-L is called a Relaxation OscillatorSQUID (RO-SQUID). See U.S. Pat. No. 5,406,201, expressly incorporatedherein by reference. At the value of OSTJ resistance R close to that forcritical damping of the SQUID (with McCumber-Stewart parameter βc˜1),the voltage across the SQUID will be either in the shape of aoscillatory relaxation pulse, or a continuous DC offset, depending onthe values of R and L. Because of resonance conditions, even a smallincrease in resistance R stops the SQUID relaxation. This phenomenon canbe applied to readout of the memory cell, without any other circuitry.The relatively small resistance of an OSTJ makes this readout quitefeasible. Read and Write currents are summarized in Table I below. Adrawback to this RO-SQUID readout is the relatively large areaassociated with the SQUID and inductor, which may be as large as 100μm².

TABLE I Current Parameters for COST cell with RO-SQUID Write ‘0’ Write‘1’ Read Bit Line −I_(write) +I_(write) ~I_(write)/2 Word LineI_(select) I_(select) I_(select) (short pulse)

A much more compact superconducting interface circuit for COST and CSHEcells than the RO-SQUID is a three-terminal nanowire device (NWD),illustrated in FIG. 9A. The scale is deep submicron, with a typicalchannel width ˜100 nm or less. An NWD is functionally similar to atraditional FET in semiconductor technology, although it exploits a verydifferent physical phenomenon to achieve switching. It is fabricated ina 2D geometry from a single thin film of superconducting material,typically an ultrathin film of NbN that is highly resistive in itsnormal state. The three-terminal device is separated into two distinctregions: the gate and the channel. Similar to a non-inverting transistoramplifier, when a logical LOW is fed into the gate input, the channelremains superconducting, and when a logical HIGH is fed into the gate,the channel becomes highly resistive (typically >2 kΩ). Unlike an FET,however, the NWD switching action is controlled by modulating the gateand channel between the superconducting and resistive states. Theresistive transition in the channel is induced by locally exceeding thecritical current density in the channel, causing current that wouldotherwise freely drain through the channel to be diverted to the output.

Tests of a prototype device have shown operation for frequencies >100MHz, with an output impedance of 100Ω, and given the design similarityto superconducting nanowire single-photon detectors (SNSPDs) mentionedabove, the device should be capable of approaching at least 1 GHz.Further, previous work on SNSPDs has shown that the device jitter isless than 40 ps, suggesting similar jitter performance for an NWD. Thisprototype NWD was capable of driving devices with impedances between 10Ωand 10 kΩ, taking a 10 μA signal into the gate and outputting 40-80 μA,depending on the output impedance.

Integration of nanowire superconducting logic will expand the domain ofRSFQ, particularly in the area of memories. The device's ability todrive high output impedances will be of particular value to RSFQintegration. NWDs are used here as high-impedance line drivers forconnecting RSFQ digital circuits and spintronic memories. Their largecurrent gain may also be used as a way to generate SFQ fanout pulses inRSFQ circuits. The superconducting layer for NWDs may be integrated intoa standard RSFQ process, as described below. The same superconductinglayer may also function as a high-inductance layer for RSFQ circuits.

Spin-Hall-effect (SHE) memories are being developed for room-temperatureoperations, see U.S. Pat. No. 7,839,675; 2014/0001524; alsoWO2014/025838, all expressly incorporated herein by reference. Thepresent application uses versions of these memory cells operating atcryogenic temperatures, known as cryogenic SHE or CSHE.

FIG. 10 shows a symbol and simplified block diagram of memory elementbased on CSHE, with an NWD-driven select line. The CSHE has low writeresistance and exhibits high magnetoresistance. The latter prevents theuse of JJs for readout, so an alternative is a “cross-talk” readoutscheme described below. The CSHE is a three-terminal device that allowsone to decouple Read and Write operations. The NWD may be used as aselection element for Write. The Read operation requires a separate gridof impedance-matched lines for transmitting voltage pulses along a row,while sensing their responses along all columns, thus providingword-parallel memory readout. All of these lines are superconductingpassive transmission lines, assuring lossless, dispersionlesstransmission of pulses, and enabling large memory arrays with low powerdissipation.

A similar NWD device may be used as the driver for a COST memory cell,which is a two-terminal device as shown in FIG. 12A. This shows thedesign of an MRAM memory cell and array based on a combination of COSTand NWD devices, together with superconducting read and write lines. TheNWD acts as a cell-selecting device functionally similar to an FET in atypical room-temperature spin-torque transfer (STT) MRAM cell. See, forexample, U.S. Pat. Nos. 7,170,778; 8,611,117; 8,116,122; 2014/0035617;2014/0015074, expressly incorporated herein by reference. Once the NWDswitches from superconducting to resistive upon activation of the WordLine (WL) Select current, it redirects Read or Write currents to theCOST element. Once the WL current is turned off, the NWD selectorreturns to the superconducting state. The power is dissipated only atthe selected cells during Read or Write operations. Since the NWD has asignificant power gain, only a very small current is needed to activatethe selected NWD. Furthermore, an NWD can be designed with an outputimpedance that closely matches an optimized COST cell, although it ismuch higher than the typical impedance for RSFQ. This corresponds to avery high magnetoresistance (MR) close to 100% or above, which in turnsleads to a robust memory cell design with high parameter margins. TheNWD/COST memory cell circuit area is defined by the COST pillar and theNWD. It is straightforward to integrate both of these side by sidewithin a 2 μm×2 μm area, sufficient to achieve a memory density >10⁷bits/cm². It is possible to reduce the cell size even further byfabricating the NWD selector under the COST pillar.

FIG. 12B shows the simplified block diagram of an NWD-COST MRAM cellarray. In order to match the higher impedance of the NWD, it ispreferable to use line drivers based on similar NWDs biased with ACcurrent. The NWD drivers will redirect the bias current into Word andBit lines once an SFQ pulse arrives from the RSFQ periphery circuits.The NWD returns to the OFF state once the bias current is reduced tozero. The Read driver can be constructed as a single NWD. For the Writedriver, one can use the same driver switched ON for a longer period, orhaving a larger current amplitude. For a bipolar Write driver, one canuse a differential push-pull scheme. The main challenge in the design ofNWD-COST MRAM will be to optimize the NWD to respond to an SFQ pulseinput. This will be done by designing an SFQ/NWD signal converter.

V. Cryogenic Multi-Chip Module (MCM) for Hybrid Technology ComputingSystem

In order to communicate between a cryogenic high-speed processor ormemory array on the one hand, and a room-temperature system controlleron the other, one needs to address an interface problem of sendingmultiple N-bit words (where N may be 64 bits for an advanced processor),addresses, and control signals between the room-temperature andcryogenic systems. FIG. 13 shows a block diagram of a system to test aprototype superconducting MRAM chip. This requires several keytechnologies: cryogenic high-speed multi-chip modules (MCMs),cryocoolers and cryogenic system integration, superconducting andsemiconducting circuits for multi-rate data and clock operation,interfacing between hybrid electronic technologies, and high-speed dataprocessing on FPGAs. These are many of the same technologies that willbe needed to develop a hybrid-technology superconducting supercomputer.

FIG. 13 shows a block diagram of a system for testing high-speedfunctional operation of a 64×64 bit MRAM chip under test (CUT). Thesystem comprises a cryogenic Testbed MCM (comprises the MRAM chip and aTest Control and Acquisition Chip—TCA) linked to a room-temperatureFPGA-based memory test controller (MTC). The communications between theMRAM and the TCA on the MCM comprise 64 parallel bits at high speeds (20GHz or above), while the communications between the TCA and the MTC areat much lower speeds, and mostly serialized data.

The intention here is to test the performance and yield of multiple MRAMchips, on the same MCM with the same TCA. This requires the use of areworkable MCM bonding technology for cryogenic chips with multi-GHzsignals. See U.S. Pat. No. 8,159,825, expressly incorporated herein byreference. This allows one to successively test multiple MRAM chips bydismounting the tested memory chip without damaging the contact pads ofthe Testbed MCM. The TCA chip will be mounted using permanent bondingepoxy, as it will not need to be changed.

The FPGA-based MTC is programmed to generate pseudorandom 64-b words andsend them to specific addresses in the 64-word MRAM array, and later toretrieve the same words and determine whether there are any bit errors.In more detail, the MTC comprises an algorithm-based pattern generator(to generate the words and the addresses), a verification module (tocheck for bit errors), and a control block that provides an interface toan external control computer for test summary and evaluation.

The TCA chip (with block diagram shown in FIG. 14) communicates 64-bitdata words and addresses serially at low speeds (MHz to 1 GHz) with theMTC module, and communicates the same data in parallel at high speeds(tends of GHz) to/from the MRAM chip. The TCA chip comprises:

-   -   High-frequency (HF) clock controller: An SFQ device that        produces 8 high-speed SFQ pulses for one test cycle at the        trigger from the MTC module.    -   Input data buffer: A latch-based buffer capable of storing 8        64-bit words. The data are serially loaded via deserializer at        low speed. At the signal from the HF clock controller, all 8        words of the test data are sent to the chip under test.    -   Address buffer: A latch-based buffer capable of storing eight        6-bit addresses and a 1-bit control signal (read/write). As with        the input data buffer, it has a serial interface to the MTC        module.    -   Output data buffer: A latch-based buffer capable of storing 8        64-bit words. The 8-word data block read from the memory chip        under test are recorded at high speed and then serially uploaded        to the MTC module via a serializer at low-speed.    -   Time-to-digital converter: RSFQ TDC circuit (see U.S. Pat. No.        6,653,952, expressly incorporated herein by reference) for        measurement of the MRAM access time (5 ps time resolution).

This test setup will provide flexibility in MRAM testing, allowing testprograms to investigate such things as critical test patterns andpattern sensitive faults. In general, there are three classes of errors:bit cell soft errors, hard errors, and transmission errors. Since acryogenic memory system cannot be tested without the interface link, itis very likely that transmission errors, especially at high data rates,are inseparable from other errors in the system. This system will alsopermit direct measurement of all memory performance parameters such ascycle time, access time, and access power.

FIGS. 28A and 28B show a configuration of a recent cryogenic test system(for superconducting high-speed digital receiver systems) that mayprovide a similar cryogenic package to the proposed superconducting MRAMtest system. See, e.g., D. Gupta et al., “Modular Multi-functionDigital-RF Receiver Systems,” IEEE Trans. Appl. Supercond., vol. 21, p.883 (2011), expressly incorporated herein by reference. The illustratedsystem was built around a Sumitomo two-stage cryocooler, with a 4 K coldstage and a 50 K intermediate temperature stage. The cryogenic systemmay use a combination of active and passive magnetic shielding of theMRAM chips and RSFQ circuits. See, e.g., Y. Polyakov, “3D activedemagnetization of cold magnetic shields”, IEEE Trans. Appl. Supercond.,vol. 21, p. 724 (2011), expressly incorporated herein by reference.

Proper high-speed testing of MRAM chips requires data exchange at thelevel of 64-bit words at full speeds, which may ultimately be as fast as100 GHz. In general, bit errors of all types increase at highfrequencies. RSFQ circuits are characterized by SFQ voltage pulses, withintegrated voltage of 2 mV-ps, typically corresponding to a signal ˜1 mVhigh with a pulsewidth of 2 ps. These pulses pass between chips on anMCM, using passive microstrip transmission lines (PTLs), over distancesof up to 10 cm or more. This is especially challenging when a parallelword of 64 bits is sent simultaneously. It is virtually impossible tomaintain fully synchronous signals over these distances.

FIG. 15A presents a preferred embodiment of a method for clock recoverywhen a parallel set of SFQ pulses is sent across PTLs from one chip toanother. At the transmit chip on the left, each of the 64 bits has aclocked destructive memory cell, a DFFC, a standard RSFQ cell which is aD-flip-flop with complementary outputs (seepavel.physics.sunysb.edu/RSFQ/Lib/dffc.html). The DFFC has one datainput, a clock input, and two outputs, the regular (non-inverting)output (top) and the inverting output (bottom). If the data stored is a‘1’, the DFFC generates an SFQ pulse from its non-inverting output whentriggered. If the data stored is a ‘0’, the DFFC generates an SFQ pulsefrom its inverting pulse when triggered. This lends itself naturally todual rail data propagation, where each DFFC always sends an SFQ on oneof its two output lines (never both), regardless of the data. At thereceive end, the non-inverting output lines are sent to FIFO (first-in,first out) memory buffers. (See, e.g., Herr & Bunyk, “Implementation andapplication of first-in, first-out buffers”, IEEE Trans. Appl.Supercond., vol. 13, p. 563, 2002, expressly incorporated herein byreference.) Further, the 64 bit signals from both ‘0’ and ‘1’ lines aresent to a tree of Muller C-elements (the element with a C, having aschematic shown in in FIG. 15B). The C-element, also known as aconfluence buffer, is another standard RSFQ cell(pavel.physics.sunysb.edu/RSFQ/Lib/c.html, expressly incorporated hereinby reference) which in this case acts essentially as an asynchronousAND. The final root of the tree generates the new clock which triggersthe FIFO buffers, and releases the data to the receiving circuit. Thisapproach ensures that if there is some dispersion in bit arrival, thelatching clock is not released until all bits have successfully arrived.

A rapid train of SFQ pulses may maintain its integrity when propagatedon lossless superconducting lines at 4K, but these pulses must besubstantially amplified to avoid bit errors when propagated onconventional lines at room temperature. This is necessary, for example,in the data sent from the TCA to the MTC. One preferred approach is toprovide a cascade of broadband semiconductor amplifiers sending signalon low-loss transmission lines, taking care not to introduce significantnoise or heat into the cryogenic system. These transmission lines maycomprise high-temperature superconducting electrodes over the colderparts of the data path to room temperature. An alternative preferredapproach is to switch to the optical domain at a convenient point, andtransmit the signal further via infrared pulses on low-loss opticalfibers. Optical signals are well known for the ability to multiplex manysignals on the same optical fiber without loss or crosstalk. Opticalfibers are also quite compatible with cryogenics, and provide high datathroughput with very little heating. Semiconductor laser diodes (such asVCSELs) may be the source of such electro-optical transducers, and fastsemiconductor photodiodes may be optoelectronic receivers that convertoptical signals back to electrical pulses.

VI. Integrated Circuit Process with Both Superconducting Circuits andMRAM Cells

To manufacture hybrid superconducting/MRAM circuits, it is essential tocombine the integrated circuit processes for both technologies. Thisbuilds on the superconducting IC foundry previously developed at Hypresfor Nb-based circuits with a complexity ˜10 k Josephson junctions per 1cm² chip. Recently, Hypres developed a fabrication process with 6superconducting layers and planarization using chemical-mechanicalpolishing (CMP), and adopted a CALDERA process for performingpattern-independent planarization. See U.S. Pat. Nos. 8,301,214;8,473,818; 8,383,426; 2011/0089405; all expressly incorporated herein byreference. The process involves one CMP step per layer, planarizing thelayer as well as the via that connects it to the next layer. The processis integrated with the previous standard process by adding the newlayers below the ground plane, and hence enabling extension of thenumber of layers to 4+n, where n is the number of additional planarizedlayers. The fact that there is one CMP step makes the process ˜20%faster per layer to implement, and integration by extending the numberof layers has led us to name the process RIPPLE (Rapid Integration ofPlanarized Process for Layer Extension). See U.S. Provisional Patentapplication 61/887,919, “Method for increasing the integration level ofsuperconducting electronic circuits, and a resulting circuit”, expresslyincorporated herein by reference. The present RIPPLE-2 process with 6superconducting layers is being extended to a RIPPLE-4 process with 8superconducting layers, followed by a RIPPLE-6 process with 10superconducting layers.

In one preferred embodiment, the MJJ/SFT fabrication can be integratedwith one of these RIPPLE processes. In order to fabricate MJJ and SFTdevices, an existing deposition module with four 4″ magnetron sputteringis fitted with two types of ferromagnetic materials: a PdFe alloy (99%Pd/1% Fe) and Permalloy (80.2% Ni/14.7% Fe/4.6% Mo/0.5% Mn). The magnetson the 4″ cathodes are upgraded to high-strength magnets in order toenable sputtering of ferromagnetic materials.

FIG. 16 shows a cross-sectional view of a process that integratesexisting planarized superconducting layers with MJJ cells, withadditional superconducting wiring layers on top. In order to simplifythe fabrication process, it is important to make the MJJ (SFIFS) and SFT(SFIFSIS) multilayer structures in the same deposition run. This can bedone by depositing a stack of an MJJ on top of an SFT, i.e., depositingan SFIFSISFIFS multilayer structure in-situ, as shown in FIG. 17A. (TheS layers are all Nb, and the I layers may all be AlOx, but the various Flayers may be different as discussed earlier.) This stack is processedfirst to produce an SFT, and afterwards the larger area MJJ, FIG. 17B.Note that the bottom electrode of the SFT is the SFIFS structure. Sincethe current flows along the top S layer of the SFIFS structure, the Flayers and the AlOx tunnel barrier do not play any role here. In thesame way one can combine in the same deposition run other devicestructures, such as SisFS and SIsFsFS. FIGS. 17C and 17D show two waysto integrate an MJJ and an SFT in a memory cell where the MJJ and SISacceptor junction are connected in parallel. In the first case, FIG.17C, the MJJ and SFT are situated in-plane next to each other. Thewiring layers connect the bottom electrodes of the MJJ and SFT, and thetop electrode of the MJJ is connected to the middle layer of the SFT. Inthe second case, FIG. 17D, the SFT and MJJ are integrated in a stackedgeometry. Here the MJJ and SIS acceptor of the SFT naturally share oneelectrode. The bottom electrode of the MJJ can be connected to the topelectrode of the SIS as shown by the slanted via contact in FIG. 17D.This design makes for a very small memory cell, enabling very denseMRAM. Note that FIGS. 17A-17D do not show control lines needed forflipping the magnetization in one of the F layers of the MJJ. Theselines would be done using the RIPPLE process, in which the control linesrun beneath the memory cell.

In an alternative preferred embodiment, either the COST or the CSHEcells may be integrated with the Josephson junction circuits of theRIPPLE process, and also the NWDs. This is analogous to the provendevelopment path for room-temperature MRAM, in which magnetoresistivedevices (such as OST) are integrated on top of prefabricated CMOSwafers.

FIG. 18 shows an example of COST and NWD devices grown on top ofplanarized superconducting devices, with an additional superconductingwiring layer on top. The NWD layer may comprise an extra thin Nb or NbNlayer. A similar process would be used for integrated fabrication ofMRAM based on CSHE devices.

The proposed integrated fabrication process is compatible intemperatures, materials, and equipment. Specifically, JJ circuits aresensitive to degradation if the temperature is raised above 200° C. forany part of the subsequent process. Fortunately the COST fabricatedsteps do not involve annealing, and no steps require more than 150° C.Furthermore, both JJ and COST devices use transition metals, ensuringcompatibility of process materials, process rates and conditions, andequipment. Although contamination of the Nb superconducting process byferromagnetic materials is possible (and could degrade thesuperconductivity), this is practically manageable and presents a lowrisk, as demonstrated in preliminary efforts at process integration.

These detailed examples of preferred embodiments do not imply that thisinvention is limited only to these examples. Other embodiments ofenergy-efficient superconducting computers with hybrid memory arrays mayalso follow from the principles herein disclosed.

What is claimed is:
 1. An array of memory cells for communicating storeddata to, and storing data receiving from, a digital processor system,each memory cell comprising: a superconducting device configured tooperate at cryogenic temperatures, comprising a switchable magneticstate ferromagnetic material; an interface circuit, configured topresent data to the superconducting device for storage, and to receivestored data from the superconducting device; and at least one of anasynchronous wave-pipelined datapath or at least one serial biascircuit, configured to serially bias a plurality of superconductingcircuits, wherein each cryogenic memory cell comprises at least twosuperconducting layers, at least one insulating layer, at least oneferromagnetic magnetic layer, wherein the cryogenic memory cell,operated at cryogenic temperatures, operates as a Josephson junctionwhose properties are dependent on a state of the at least oneferromagnetic layer.
 2. The array of memory cells according to claim 1,wherein the interface circuit comprises energy-efficientrapid-single-flux-quantum logic.
 3. The array of memory cells accordingto claim 1, wherein the array of memory cells is configured to operateat cryogenic temperatures less than 10 K.
 4. The array of memory cellsaccording to claim 1, comprising the asynchronous wave-pipelineddatapath.
 5. The array of memory cells according to claim 1, comprisingthe at least one serial bias circuit.
 6. The array of memory cellsaccording to claim 1, wherein each cryogenic memory cell comprises anS₁IsFS₂ vertical stack sequentially comprising a first strongsuperconducting layer (S₁), an insulating layer (I), a weaksuperconductor layer (s), a thin ferromagnetic layer (F), and a secondstrong superconductor layer (S₂).
 7. The array of memory cells accordingto claim 1, wherein each cryogenic memory cell comprises anS₁Is₁F₁s₂F₂S₂ vertical stack sequentially comprising a first strongsuperconducting layer (S₁), an insulating layer (I), a first weaksuperconductor layer (s₁), a first thin ferromagnetic layer (F₁), asecond weak superconductor layer (s₂), a second thin ferromagnetic layer(F₂), and a second strong superconductor layer (S₂).
 8. The array ofmemory cells according to claim 1, wherein each cryogenic memory cellcomprises an S₁F₁IF₂S₂ vertical stack sequentially comprising a firststrong superconducting layer (S₁), a first thin ferromagnetic layer(F₁), an insulating layer (I), a second thin ferromagnetic layer (F₂),and a second strong superconductor layer (S₂).
 9. The array of memorycells according to claim 1, wherein each cryogenic memory cell comprisesan S₁F₁I₁F₂S₂I₂S₃ vertical stack sequentially comprising a first strongsuperconducting layer (S₁), a first thin ferromagnetic layer (F₁), afirst insulating layer (I₁), a second thin ferromagnetic layer (F₂), asecond strong superconductor layer (S₂), a second insulating layer (I₂),and a third strong superconductor layer (S₃).
 10. The array of memorycells according to claim 1, wherein data stored in the array of memorycells is read out using ballistic single-flux-quantum pulses.
 11. Thearray of memory cells according to claim 1, wherein each memory cell ofthe array of memory cells is selected using a three-terminalsuperconducting device.
 12. The array of memory cells according to claim1, further comprising at least one line driver configured to interfacethe array of memory cells with at least one superconducting transmissionline.
 13. A method of storing information, comprising: providing anarray of memory cells, each memory cell comprising a superconductingdevice configured to operate at cryogenic temperatures, comprising aswitchable magnetic state ferromagnetic material, and an interfaceconfigured to transmit stored data to, and to receive data for storagefrom, at least one superconducting transmission line, wherein eachmemory cell of the array of memory cells comprises at least twosuperconducting layers, at least one insulating layer, at least oneferromagnetic magnetic layer, wherein the respective memory cell,operated at the cryogenic temperatures, operates as a Josephson junctionwhose properties are dependent on a state of the at least oneferromagnetic layer; providing at least one of an asynchronouswave-pipelined datapath for the array of memory cells, and at least oneserial bias circuit for the array of memory cells, configured toserially bias a plurality of the superconducting devices; communicatinga first signal through the at least one superconducting transmissionline addressed to a respective memory cell; storing data correspondingto the communicated first signal in the respective addressed memorycell; receiving a request for information addressed to the respectivememory cell; and communicating a second signal through the at least onesuperconducting transmission comprising data corresponding to the storeddata.
 14. The method according to claim 13, wherein data stored in thearray of memory cells is read out using ballistic single-flux-quantumpulses.
 15. The method according to claim 13, wherein eachsuperconducting device comprises at least one of: at least threesuperconducting layers; at least two ferromagnetic magnetic layers; andat least two insulating layers.
 16. An array of memory cells,comprising: a plurality of superconducting devices serially-biased by atleast one serial bias circuit, configured to operate at cryogenictemperatures, each superconducting device comprising a switchablemagnetic state ferromagnetic material, and a data interface; an addressdecoder, configured to receive an address and to select at least onesuperconducting device from the plurality of superconducting devicescorresponding to the received address; and at least one superconductingtransmission line, being configured in a first mode to selectivelyreceive data for storage in a respective superconducting device bypresentation of the received data at the data interface of therespective superconducting device, in dependence on the receivedaddress, and being configured in a second mode to selectively transmitdata retrieved from a respective data interface of a respectivesuperconducting device in dependence on the received address, whereineach of the plurality of superconducting devices comprises at least twosuperconducting layers, at least one insulating layer, at least oneferromagnetic magnetic layer, wherein the cryogenic memory cell,operated at cryogenic temperatures, operates as a Josephson junctionwhose properties are dependent on a state of the at least oneferromagnetic layer.
 17. The array of memory cells according to claim16, wherein the address decoder is further configured to select the atleast one superconducting device using a three-terminal superconductingdevice.
 18. The array of memory cells according to claim 16, whereindata stored in the respective superconducting devices is read out usingballistic single-flux-quantum pulses.